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WS57C256F-35D 데이터시트 PDF




STMicroelectronics에서 제조한 전자 부품 WS57C256F-35D은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 WS57C256F-35D 자료 제공

부품번호 WS57C256F-35D 기능
기능 HIGH SPEED 32K x 8 CMOS EPROM
제조업체 STMicroelectronics
로고 STMicroelectronics 로고


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WS57C256F-35D 데이터시트, 핀배열, 회로
WS57C256F
HIGH SPEED 32K x 8 CMOS EPROM
Fast Access Time
KEY FEATURES
Immune to Latch-UP
— tACC = 35 ns
— tCE = 35 ns
Low Power Consumption
— 200 µA Standby ICC
— Up to 200 mA
ESD Protection Exceeds 2000 Volts
Available in 300 Mil DIP and PLDCC
DESC SMD No. 5962-86063
GENERAL DESCRIPTION
The WS57C256F is a High Performance 32K x 8 UV Erasable EPROM. It is manufactured using an advanced
CMOS process technology enabling it to operate at speeds as fast as 35 ns Address Access Time (tACC) and 35 ns
Chip Enable Time (tCE). It was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting in a
low power device with a very cost effective die size. The low standby power capability of this 256 K product (200 µA
in a CMOS interface environment) is especially attractive.
This product, with its high speed capability, is particularly appropriate for use with today's fast DSP processors and
high-clock-rate Microprocessors. The WS57C256F's 35 ns speed enables these advanced processors to operate
without introducing any undesirable wait states. The WS57C256F is also ideal for use in modem applications, and is
recommended for use in these applications by the leading modem chip set manufacturer.
The WS57C256F is available in a variety of package types including the space saving 300 Mil DIP, the surface
mount PLDCC, and other windowed and non-windowed options. And its standard JEDEC EPROM pinouts provide
for automatic upgrade density paths for current 64K and 128K EPROM users.
MODE SELECTION
PINS CE/
MODE
PGM
OE
A9
A0
VPP VCC OUTPUTS
Read
Output
Disable
VIL VIL X
X VIH X
X VCC VCC DOUT
X VCC VCC High Z
Standby
Program
Program
Verify
VIH X
VIL VIH
X
X
X VIL X
X VCC VCC
X VPP2 VCC
High Z
DIN
X VPP2 VCC DOUT
Program
Inhibit
Signature3
VIH VIH X X VPP2 VCC
VIL VIL VH2 VIL VCC VCC
VIL VIL VH2 VIH VCC VCC
High Z
23 H4
EO H5
NOTES:
1. X can be VIL or VIH.
2. VIH = VPP = 12.75 ± 0.25 V.
3. A1 – A8, A10 – A14 = VIL.
4. Manufacturer Signature.
5. Device Signature.
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
Output Enable Time (Max)
WS57C256F-35
35 ns
15 ns
PIN CONFIGURATION
TOP VIEW
Chip Carrier
CERDIP
VPP 1
A6
4
5
3
2
1
32 31 30
29
A8
A12 2
A7 3
A5 6
28
A4 7
27
A3 8
26
A2 9
25
A1 10
24
A0 11
23
NC 12
22
O0 13
21
14 15 16 17 18 19 20
A9
A11
NC
OE
A10
CE/PGM
O7
O6
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
O0 11
O1 12
O2 13
O1 O2 NC O3 O4 O5
GND 14
28 VCC
27 A14
26 A13
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE/PGM
19 O7
18 O6
17 O5
16 O4
15 O3
WS57C256F-45
45 ns
20 ns
WS57C256F-55
55 ns
25 ns
WS57C256F-70
70 ns
30 ns
Return to Main Menu
3-13




WS57C256F-35D pdf, 반도체, 판매, 대치품
WS57C256F
PROGRAMMING INFORMATION
DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
SYMBOLS
PARAMETER
MIN MAX
UNITS
ILI
Input Leakage Current
(VIN = VCC or Gnd)
IPP
VPP Supply Current During
Programming Pulse (CE/ PGM = VIL)
ICC VCC Supply Current (Note 8)
VOL
Output Low Voltage During Verify
(IOL = 16 mA)
VOH
Output High Voltage During Verify
(IOH = –4 mA)
–10 10 µA
60 mA
35 mA
0.4 V
2.4 V
NOTE:
8. VCC must be applied either coincidentally or before VPP and removed either coincidentally or after VPP.
9. VPP must not be greater than 13 volts including overshoot. During CE = PGM = VIL, VPP must not be switched from 5 volts to
12.5 volts or vice-versa.
10. During power up the PGM pin must be brought high (VIH) either coincident with or before power is applied to VPP.
AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
SYMBOLS
PARAMETER
MIN
TYP
MAX
UNITS
tAS
tCOH
tOES
tOS
tAH
tOH
tDF
tOE
tVS/ tCES
tPW
tOCX
Address Setup Time
CE High to OE High
Output Enable Setup Time
Data Setup Time
Address Hold Time
Data Hold Time
Chip Disable to Output Float Delay
Data Valid From Output Enable
VPP Setup Time/CE Setup Time
PGM Pulse Width
OE Low to CE "Don't Care"
2
2
2
2
0
2
0
2
100
2
µs
µs
µs
µs
µs
µs
130 ns
130 ns
µs
200 µs
µs
PROGRAMMING WAVEFORM
ADDRESSES
DATA
VPP
VPP
VCC
VIH
CE/PGM
VIL
VIH
OE
VIL
ADDRESS STABLE
tAS
DATA IN STABLE
HIGH Z
tOS tOH tOE
tAH
DATA OUT
VALID
tDF
tVS
tCES
tOCX
tCOH
tPW tOES
3-16

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