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X0205yN5BA4 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 X0205yN5BA4
기능 1.25A SCRs
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X0205yN5BA4 데이터시트, 핀배열, 회로
®
SENSITIVE
X02 Series
1.25A SCRs
MAIN FEATURES:
Symbol
Value
Unit
IT(RMS)
1.25 A
VDRM/VRRM
600 and 800
V
IGT
50 to 200
µA
DESCRIPTION
Thanks to highly sensitive triggering levels, the
X02 SCR series is suitable for all applications
where the available gate current is limited, such as
ground fault circuit interruptors, overvoltage
crowbar protection in low power supplies,
capacitive ignition circuits, ...
Available in though-hole or surface-mount
packages, these devices are optimized in forward
voltage drop and inrush current capabilities, for
reduced power losses and high reliability in harsh
environments.
A
G
K
TO-92
(X02xxA)
SOT-223
(X02xxN)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
Parameter
RMS on-state current
(180° conduction angle)
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
TO-92
SOT-223
TO-92
SOT-223
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
TI = 55°C
Ttab = 95°C
TI = 55°C
Ttab = 95°C
Tj = 25°C
Tj = 25°C
Value
1.25
0.8
25
22.5
2.5
Tj = 125°C
50
Tj = 125°C
Tj = 125°C
1.2
0.2
- 40 to + 150
- 40 to + 125
Unit
A
A
A
A2S
A/µs
A
W
°C
September 2000 - Ed: 3
1/6




X0205yN5BA4 pdf, 반도체, 판매, 대치품
X02 Series
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (SOT-223/
TO-92).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration
(SOT-223/TO-92).
IT(av)(A)
1.4
1.2 SOT-223
1.0
SOT-223
0.8
0.6 TO-92
0.4
0.2
0.0
0
TO-92
25
Tamb(°C)
50 75
100 125
K = [Zth(j-a)/Rth(j-a)]
1.00
TO-92
0.10
SOT-223
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT, IH, IL[Tj]/IGT, IH, IL[Tj] = 25°C]
1.50
1.25
1.00
0.75
0.50
0.25
Tj(°C)
0.00
-40 -20 0 20 40 60 80 100 120 140
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
10.0 dV/dt[Rgk]/dV/dt [Rgk=1k]
Tj = 125°C
VD = 0.67xVDRM
1.0
Rgk(k)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
IH[Rgk] / IH[Rgk = 1 k]
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
Rgk(k)
1E-1
1E+0
Tj = 25°C
1E+1
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
dV/dt[Cgk] / dV/dt[Rgk = 1k]
20
18
16
14
12
10
8
6
4
2 Cgk(nF)
0
0 2 4 6 8 10 12 14 16 18 20 22
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X0205yN5BA4

1.25A SCRs

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