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ZMY56 데이터시트 PDF




Diotec Semiconductor에서 제조한 전자 부품 ZMY56은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 ZMY56 기능
기능 Surface mount Silicon-Zener Diodes (non-planar technology)
제조업체 Diotec Semiconductor
로고 Diotec Semiconductor 로고


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ZMY56 데이터시트, 핀배열, 회로
ZMY 1…ZMY 200 (1.3 W)
Surface mount Silicon-Zener Diodes
(non-planar technology)
Flächendiffundierte Si-Zener-Dioden
für die Oberflächenmontage
Version 2004-05-13
Maximum power dissipation
Maximale Verlustleistung
1.3 W
Nominal Z-voltage – Nominale Z-Spannung
1…200 V
Plastic case MELF
Kunststoffgehäuse MELF
Weight approx. – Gewicht ca.
DO-213AB
0.12 g
Dimensions / Maße in mm
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
see page 18
siehe Seite 18
Standard Zener voltage tolerance is graded to the international E 24 (~5%) standard.
Other voltage tolerances and higher Zener voltages on request.
Die Toleranz der Zener-Spannung ist in der Standard-Ausführung gestuft nach der internationalen
Reihe E 24 (~5%). Andere Toleranzen oder höhere Arbeitsspannungen auf Anfrage.
Advantages of non-planar Zener-Diodes:
Improved clamping capability
Increased max. zener current IZmax
Chips produced with Plasma-EPOS technology
Molded plastic over passivated junction
Vorteile der flächendiffundierten Zener-Dioden:
Hohe Impulsfestigkeit
Hoher max. Arbeitsstrom IZmax
Chips hergestellt in Plasma-EPOS-Technologie
Passivierte Chips im Plastik-Gehäuse
Maximum ratings and Characteristics
Grenz- und Kennwerte
Power dissipation – Verlustleistung
TA = 50°C
Non repetitive peak power dissipation, t < 10 ms
Einmalige Impuls-Verlustleistung, t < 10 ms
TA = 25°C
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht – Kontaktfläche
Ptot
PZSM
1.3 W 1)
40 W
Tj – 50...+150°C
TS – 50...+175°C
RthA < 45 K/W 1)
RthT < 10 K/W
1) Mounted on P.C. board with 50 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses – Gemessen mit Impulsen
3) The ZMY 1 is a diode operated in forward. Hence, the index of all parameters should be “F” instead of “Z”.
The cathode, indicated by a white ring is to be connected to the negative pole.
Die ZMY 1 ist eine in Durchlaß betriebene Si-Diode. Daher ist bei allen Kenn- und Grenzwerten der Index
“F” anstatt “Z” zu setzten. Die durch den weißen Ring gekennzeichnete Kathode ist mit dem Minuspol zu verbinden.
210





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