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ZNBG3001 데이터시트 PDF




Zetex Semiconductors에서 제조한 전자 부품 ZNBG3001은 전자 산업 및 응용 분야에서
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부품번호 ZNBG3001 기능
기능 FET BIAS CONTROLLER
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ZNBG3001 데이터시트, 핀배열, 회로
FET BIAS CONTROLLER
ISSUE 1- AUGUST 1998
DEVICE DESCRIPTION
The ZNBG series of devices are designed to
meet the bias requirements of GaAs and
HEMT FETs commonly used in satellite
receiver LNBs, PMR, cellular telephones etc.
with a minimum of external components.
With the addition of two capacitors and a
resistor the devices provide drain voltage
and current control for 3 external grounded
source FETs, generating the regulated
negative rail required for FET gate biasing
whilst operating from a single supply. This
negative bias, at -3 volts, can also be used to
supply other external circuits.
The ZNBG3000/1 contains three bias stages.
A single resistor allows FET drain current to
be set to the desired level. The series also
offers the choice of drain voltage to be set
for the FETs, the ZNBG3000 gives 2.2 volts
drain whilst the ZNBG3001 gives 2 volts.
These devices are unconditionally stable
over the full working temperature with the
FETs in place, subject to the inclusion of the
recommended gate and drain capacitors.
These ensure RF stability and minimal
injected noise.
FEATURES
Provides bias for GaAs and HEMT FETs
Drives up to three FETs
Dynamic FET protection
Drain current set by external resistor
Regulated negative rail generator
requires only 2 external capacitors
Choice in drain voltage
Wide supply voltage range
QSOP surface mount package
ZNBG3000
ZNBG3001
It is possible to use less than the devices full
complement of FET bias controls, unused
drain and gate connections can be left open
circuit without affecting operation of the
remaining bias circuits.
In order to protect the external FETs the
circuits have been designed to ensure that,
under any conditions including power
up/down transients, the gate drive from the
bias circuits cannot exceed the range -3.5V
to 0.7V. Furthermore if the negative rail
experiences a fault condition, such as
overload or short circuit, the drain supply to
the FETs will shut down avoiding excessive
current flow.
The ZNBG3000/1 are available in QSOP16
packages for the minimum in devices size.
Device operating temperature is -40 to 70°C
to suit a wide range of environmental
conditions.
APPLICATIONS
Satellite receiver LNBs
Private mobile radio (PMR)
Cellular telephones
Single in single out C Band LNB
4-137




ZNBG3001 pdf, 반도체, 판매, 대치품
ZNBG3000
ZNBG3001
TYPICAL CHARACTERISTICS
16
Vcc = 5V
14
12
10
8
6
4
2
0
0
10 20 30
40
Rcal (k)
JFET Drain Current v Rcal
50
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
0
Note:- Operation with loads > 200µA
is not guaranteed.
Vcc = 5V
6V
8V
10V
0.2 0.4 0.6 0.8
External Vsub Load (mA)
Vsub v External Load
1.0
2.4
ZNBG3000
2.3
2.2
Vcc = 5V
6V
8V
2.1 10V
2.0
2 4 6 8 10 12 14 16
Drain Current (mA)
JFET Drain Voltage v Drain Current
2.2
ZNBG3001
2.1
2.0
Vcc = 5V
6V
8V
1.9 10V
1.8
2 4 6 8 10 12 14 16
Drain Current (mA)
JFET Drain Voltage v Drain Current
4-140

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ZNBG3001 전자부품, 판매, 대치품
ZNBG3000
ZNBG3001
APPLICATIONS INFORMATION (Continued)
The ZNBG devices have been designed to protect the external FETs from adverse operating
conditions. With a JFET connected to any bias circuit, the gate output voltage of the bias circuit
can not exceed the range -3.5V to 0.7V, under any conditions including powerup and powerdown
transients. Should the negative bias generator be shorted or overloaded so that the drain current
of the external FETs can no longer be controlled, the drain supply to FETs is shut down to avoid
damage to the FETs by excessive drain current.
The following diagram show the ZNBG3000/1 in typical LNB applications.
Single in/Single out C band LNB block diagram
4-143

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