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ZNBG3115 데이터시트 PDF




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부품번호 ZNBG3115 기능
기능 FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION
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ZNBG3115 데이터시트, 핀배열, 회로
FET BIAS CONTROLLER WITH POLARISATION
SWITCH AND TONE DETECTION
ISSUE 1 - JUNE 2001
ZNBG3115
ZNBG3116
DEVICE DESCRIPTION
The ZNBG series of devices are designed to meet the
bias requirements of GaAs and HEMT FETs
commonly used in satellite receiver LNBs, PMR,
cellular telephones etc. with a minimum of external
components.
Drain current setting of the ZNBG3115/16 is user
selectable over the range 0 to 15mA, this is achieved
with addition of a single resistor. The series also offers
the choice of drain voltage to be set for the FETs, the
3115 gives 2.2 volts drain whilst the 3116 gives 2 volts.
With the addition of two capacitors and a resistor the
devices provide drain voltage and current control for
three external grounded source FETs, generating
the regulated negative rail required for FET gate
biasing whilst operating from a single supply. This
negative bias, at -2.8 volts, can also be used to
supply other external circuits.
The ZNBG3115/16 includes bias circuits to drive up
to three external FETs. A control input to the device
selects either one of two FETs as operational, the
third FET is permanently active. This feature is
normally used as an LNB polarisation switch. Also
specific to Universal LNB applications is the 22kHz
tone detection and logic output feature which is
used to enable high and low band frequency
switching.
The ZNBG3115/16 has been designed to cope with
DiSEqC™ ready set top boxes and rejects all
transients from channel switching.
These devices are unconditionally stable over the full
working temperature with the FETs in place, subject to
the inclusion of the recommended gate and drain
capacitors. These ensure RF stability and minimal
injected noise.
It is possible to use less than the devices full
complement of FET bias controls, unused drain and gate
connections can be left open circuit without affecting
operation of the remaining bias circuits.
To protect the external FETs the circuits have been
designed to ensure that, under any conditions including
power up/down transients, the gate drive from the bias
circuits cannot exceed the range -3.5V to 1V.
Additionally each stage has its own individual current
limiter. Furthermore if the negative rail experiences a
fault condition, such as overload or short circuit, the
drain supply to the FETs will shut down avoiding
excessive current flow.
The ZNBG3115/16 are available in QSOP16 and QSOP20
for the minimum in device size. Device operating
temperature is -40 to 80°C to suit a wide range of
environmental conditions.
FEATURES
Provides bias for GaAs and HEMT FETs
Drives up to three FETs
Dynamic FET protection
Drain current set by external resistor
Regulated negative rail generator requires only
2 external capacitors
Choice in drain voltage
Wide supply voltage range
Polarisation switch for LNBs
22kHz tone detection for band switching
Tone detector ignores unwanted signals
Support fr MIMIC, FET and Bipolar local
oscillator devices
Compliant with ASTRA control specifications
QSOP 16 and 20 surface mount packages
APPLICATIONS
Satellite receiver LNBs
Private mobile radio (PMR)
Cellular telephones
ISSUE 1 - JUNE 2001
1




ZNBG3115 pdf, 반도체, 판매, 대치품
ZNBG3115
ZNBG3116
SYMBOL PARAMETER
CONDITIONS
LIMITS
UNITS
TONE DETECTION CHARACTERISTICS
MIN. TYP. MAX.
VOUT
Filter Amplifier
Bias Voltage 5
Ifin=0
Finz
Input Impedance
VFIN=100mV p/p
AG Amplifier Gain VFIN=100mV p/p
FVT V Threshold5
VLOV
ILOV
Output Stage
LOV Volt. Range 6
LOV Bias Current
IL=50mA(LB or HB)
VLOV=0
VLBL
LB Output Low
VLOV=0 IL=0
Rlb-Csub=1M
VLOV=3V IL=0mA
Rlb-Csub=1M
VLBH
LB Output High
VLOV=0 IL=10mA
VLOV=3V IL=50mA
VHBL
HB Output Low
VLOV=0 IL=0
Rhb-Csub=1M
VLOV=3V IL=0
Rhb-Gnd=1M
VHBH
HB Output High
VLOV=0 IL=10mA
VLOV=3V IL=50mA
POLARITY SWITCH CHARACTERISTICS
Enabled 6
Enabled 6
Disabled 6
Disabled 6
Disabled 6
Disabled6
Enabled 6
Enabled 6
1.75
100
1.95
150
30
170
2.15
350
V
V/mA
mV p/p
-0.5
0.02
VCC-1.8 V
0.15 1.0
µA
-3.05 -2.80 -2.55
-0.01 0
0.1
V
V
-0.025 0
2.9 3.0
0.025 V
3.1 V
-3.05 -2.80 -2.55
-0.01 0
-0.025 0
2.9 3.0
0.1
0.025
3.1
V
V
V
V
V
IPOL
VTPOL
TSPOL
Input Current
Threshold Voltage
Switching Speed
VPOL=25V (Applied via RPOL=2kΩ)
VPOL=25V (Applied via RPOL=2kΩ)
VPOL=25V (Applied via RPOL=2kΩ)
10 25 40
µA
14 14.75 15.5 V
100 ms
NOTES:
1. The negative bias voltages specified are generated on-chip using an internal oscillator. Two external capacitors, CNB and CSUB, of 47nF are required for this
purpose.
2. The characteristics are measured using an external reference resistor RCAL of value 33k wired from pins RCAL to ground.
3. Noise voltage is not measured in production.
4. Noise voltage measurement is made with FETs and gate and drain capacitors in place on all outputs. CG, 4.7nF, are connected between gate outputs and
ground, CD, 10nF, are connected between drain outputs and ground.
5 . These parameters are linearly related to VCC
6. These parameters are measured using Test Circuit 1
4
ISSUE 1 - JUNE 2001

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ZNBG3115 전자부품, 판매, 대치품
FUNCTIONAL DIAGRAM
ZNBG3115
ZNBG3116
FUNCTIONAL DESCRIPTION
The ZNBG devices provide all the bias requirements for external FETs, including the generation of the negative
supply required for gate biasing, from the single supply voltage.The diagram above shows a single stage from
the ZNBG series. The ZNBG3115/16 contains 3 such stages. The negative rail generator is common to both
devices.
The drain voltage of the external FET QN is set by the ZNBG device to its normal operating voltage. This is
determined by the on board VD Set reference, for the ZNBG3115 this is nominally 2.2 volts whilst the ZNBG3116
provides nominally 2 volts.
The drain current taken by the FET is monitored by the low value resistor ID Sense. The amplifier driving the gate
of the FET adjusts the gate voltage of QN so that the drain current taken matches the current called for by an
external resistor RCAL.
Since the FET is a depletion mode transistor, it is often necessary to drive its gate negative with respect to ground
to obtain the required drain current. To provide this capability powered from a single positive supply, the device
includes a low current negative supply generator. This generator uses an internal oscillator and two external
capacitors, CNB and CSUB.
ISSUE 1 - JUNE 2001
7

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