Datasheet.kr   

ZNBG3211 데이터시트 PDF




Zetex Semiconductors에서 제조한 전자 부품 ZNBG3211은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 ZNBG3211 자료 제공

부품번호 ZNBG3211 기능
기능 FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION
제조업체 Zetex Semiconductors
로고 Zetex Semiconductors 로고


ZNBG3211 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 16 페이지수

미리보기를 사용할 수 없습니다

ZNBG3211 데이터시트, 핀배열, 회로
FET BIAS CONTROLLER WITH POLARISATION ZNBG3210
SWITCH AND TONE DETECTION
ZNBG3211
ISSUE 2 - FEBRUARY 2000
DEVICE DESCRIPTION
The ZNBG series of devices are designed to
meet the bias requirements of GaAs and
HEMT FETs commonly used in satellite
receiver LNBs, PMR cellular telephones etc.
with a minimum of external components.
With the addition of two capacitors and a
resistor the devices provide drain voltage and
current control for three external grounded
source FETs, generating the regulated
negative rail required for FET gate biasing
whilst operating from a single supply. This
negative bias, at -3 volts, can also be used to
supply other external circuits.
The ZNBG3210/11 includes bias circuits to
drive up to three external FETs. A control
input to the device selects either one of two
FETs as operational using 0V gate switching
methodology, the third FET is permanently
active. This feature is particularly used as an
LNB polarisation switch. Also specific to LNB
applications is the enhanced 22kHz tone
detection and logic output feature which is
used to enable high and low band frequency
switching. The detector has been specifically
designed to reject inerference such as low
frequency signals and DiSEqCtone bursts
- without the use of additional external
components.
Drain current setting of the ZNBG3210/11 is
user selectable over the range 0 to 15mA, this
FEATURES
Provides bias for GaAs and HEMT FETs
Drives up to three FETs
Dynamic FET protection
Drain current set by external resistor
Regulated negative rail generator
requires only 2 external capacitors
Choice in drain voltage
Wide supply voltage range
Polarisation switch for LNBs -
supporting zero volt gate switching
topology.
22kHz tone detection for band switching
Compliant with ASTRA control
specifications
QSOP surface mount package
is achieved with the addition of a single
resistor. The series also offers the choice of
FET drain voltage, the 3210 gives 2.2 volts
drain whilst the 3211 gives 2 volts.
These devices are unconditionally stable
over the full working temperature with the
FETs in place, subject to the inclusion of the
recommended gate and drain capacitors.
These ensure RF stability and minimal
injected noise.
It is possible to use less than the devices full
complement of FET bias controls, unused
drain and gate connections can be left open
circuit without affecting operation of the
remaining bias circuits.
In order to protect the external FETs the
circuits have been designed to ensure that,
under any conditions including power
up/down transients, the gate drive from the
bias circuits cannot exceed the range -3.5V
to 1V. Furthermore if the negative rail
experiences a fault condition, such as
overload or short circuit, the drain supply to
the FETs will shut down avoiding excessive
current flow.
The ZNBG3210/11 are available in QSOP20
for the minimum in device size. Device
operating temperature is -40 to 70°C to suit
a wide range of environmental conditions.
APPLICATIONS
Satellite receiver LNBs
Private mobile radio (PMR)
Cellular telephones
67-1




ZNBG3211 pdf, 반도체, 판매, 대치품
ZNBG3210
ZNBG3211
SYMBOL PARAMETER CONDITIONS
LIMITS
UNITS
TONE DETECTION CHARACTERISTICS
MIN. TYP. MAX.
IB
VOUT
IOUT
Filter Amplifier
Input Bias Current RF1=150k
Output Voltage 5 RF1=150k
Output Current 5 VOUT=1.96V, VFIN=2.1V
GV Voltage Gain f=22kHz,VIN=1mV
Rejection
fR8
Frequency
V(AC)in=1V p/p sq.w6
VLOV
Output Stage
LOV Volt. Range IL=50mA(LB or HB)
ILOV
VLBL
VLBH
LOV Bias Current
LB Output Low
LB Output High
VLOV=0
VLOV=0 IL=-10µA
VLOV=3V IL=0
VLOV=0 IL=10mA
VLOV=3V IL=50mA
Enabled 6
Enabled 7
Disabled 6
Disabled 7
VHBL
VHBH
HB Output Low
HB Output High
VLOV=0 IL=-10µA
VLOV=3V IL=0
VLOV=0 IL=10mA
VLOV=3V IL=50mA
Disabled 6
Disabled 7
Enabled 6
Enabled 7
POLARITY SWITCH CHARACTERISTICS
0.02 0.07 0.25 µA
1.75 1.95 2.05 V
400 520 650 µA
46 dB
1.0 7.5
kHz
-0.5 VCC-1.8 V
0.02 0.15 1.0 µA
-3.5 -2.75 -2.5 V
-0.01 0
0.01 V
-0.025 0
2.9 3.0
0.025 V
3.1 V
-3.5 -2.75 -2.5 V
-0.01 0
0.01 V
-0.025 0
2.9 3.0
0.025 V
3.1 V
IPOL Input Current VPOL=25V (Applied via RPOL=10kΩ) 10 20 40 µA
VTPOL
Threshold
Voltage
14
VPOL=25V (Applied via RPOL=10kΩ)
14.75 15.5 V
TSPOL
Switching Speed VPOL=25V (Applied via RPOL=10kΩ)
100 ms
NOTES:
1. The negative bias voltages specified are generated on-chip using an internal oscillator. Two external capacitors, CNB and CSUB, of
47nF are required for this purpose.
2. The characteristics are measured using an external reference resistor RCAL of value 33k wired from pins RCAL to ground.
3. Noise voltage is not measured in production.
4. Noise voltage measurement is made with FETs and gate and drain capacitors in place on all outputs. CG, 4.7nF, are connected between
gate outputs and ground, CD, 10nF, are connected between drain outputs and ground.
5 . These parameters are linearly related to VCC
6. These parameters are measured using Test Circuit 1
7. These parameters are measured using Test Circuit 2
8. The ZNBG32 series will also reject DiSEqCand other common switching bursts.
67-4

4페이지










ZNBG3211 전자부품, 판매, 대치품
ZNBG3210
ZNBG3211
TYPICAL CHARACTERISTICS
70
Vcc = 5V
60
50
40
30
20
10
0
100 1k 10k 100k 1M 10M
Frequency (Hz)
Open Loop Gain v Frequency
VCC = 5V
4 VLOV = 0V
Tamb = 70°C
2
Tamb = 25°C
Tamb = -40°C
0
-2
-4
-6
-8
0 10 20 30 40 50
Load Current (mA)
LB/HB Offset Voltage v Load Current
180
VCC = 5V
150
120
90
60
30
0
100 1k 10k 100k 1M 10M
Frequency (Hz)
Open Loop Phase v Frequency
2.0
1.9
Tamb = -40 C
1.8
1.7
1.6
1.5
1.4 Tamb = 25°C
Tamb = 70°C
1.3
VCC = 5V
1.2
0 10 20 30 40 50
Load Current (mA)
LB/HB Dropout Voltage v Load Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
100
VCC = 5V
VIN=0.1Vpkpk
Test Circuit 1
1k 10k 100k
Frequency (Hz)
Filter Response
1M
67-7

7페이지


구       성 총 16 페이지수
다운로드[ ZNBG3211.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
ZNBG3210

FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

Zetex Semiconductors
Zetex Semiconductors
ZNBG3210Q20

FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

Zetex Semiconductors
Zetex Semiconductors

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵