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PDF ZTX694B Data sheet ( Hoja de datos )
| Número de pieza | ZTX694B | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ZTX694B
ISSUE 1 APRIl 94
FEATURES
* 120 Volt VCEO
* Gain of 400 at IC=200mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Relay / solenoid driver
* Battery powered circuits
* Motor drivers
ABSOLUTE MAXIMUM RATINGS.
C
B
E
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation Tamb=25°C
derate above 25°C
VCBO
VCEO
VEBO
ICM
IC
Ptotp
Ptot
120 V
120 V
5V
1A
0.5 A
1.5 W
1W
5.7 mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 120
V IC=100µA
Collector-Emitter Breakdown V(BR)CEO
Voltage
120
V IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
5
V IE=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
VBE(sat)
0.1 µA
0.1 µA
0.25 V
0.5 V
0.9 V
VCB=100V
VEB=4V
IC=100mA, IB=0.5mA*
IC=400mA, IB=5mA*
IC=1A, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.9 V
IC=1A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE 500
400
150
IC=100mA, VCE=2V*
IC=200mA, VCE=2V*
IC=400mA, VCE=2V*
3-244
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ZTX694B.PDF ] | |
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