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PDF ZTX788A Data sheet ( Hoja de datos )
| Número de pieza | ZTX788A | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ZTX788A (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
PROVISIONAL DATASHEET ISSUE 2 SEPTEMBER 94
FEATURES
* 15 Volt VCEO
* Gain of 200 at IC=2 Amps
* Very low saturation voltage
ZTX788A
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at Tamb=25°C
derate above 25°C
VCBO
VCEO
VEBO
ICM
IC
Ptotp
Ptot
-20 V
-15 V
-5 V
-10 A
-3 A
1.5 W
1W
5.7 mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -20
-30
V IC=-100µA
Collector-Emitter Breakdown V(BR)CEO
Voltage
-15
-20
V IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
-8.5
V IE=-100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
VBE(sat)
-0.025
-0.25
-0.28
-0.85
-0.1
-10
-0.1
-0.035
-0.32
-0.33
-1.0
µA
µA
µA
V
V
V
V
VCB=-10V
VCB=-10V, Tamb=100°C
VEB=-4V
IC=-0.1A, IB=-2mA*
IC=-2A, IB=-20mA*
IC=-3A, IB=-200mA*
IC=-2A, IB=-20mA*
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
VBE(on)
hFE
-0.8 V
300 800
250
200
80
IC=-2A, VCE=-3V*
IC=-10mA, VCE=-1V*
IC=-1A, VCE=-1V*
IC=-2A, VCE=-1V*
IC=-10A, VCE=-2V*
3-271
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet ZTX788A.PDF ] | |
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