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PDF ZTX795A Data sheet ( Hoja de datos )
| Número de pieza | ZTX795A | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 140 Volt VCEO
* Gain of 250 at IC=0.2 Amps
* Very low saturation voltage
ZTX795A
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at Tamb=25°C
derate above 25°C
VCBO
VCEO
VEBO
ICM
IC
Ptotp
Ptot
-140 V
-140 V
-5 V
-1 A
-0.5 A
1.5 W
1W
5.7 mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -140
V IC=-100µA
Collector-Emitter Breakdown V(BR)CEO
Voltage
-140
V IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO -5
V IE=-100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
ICBO
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-0.1
-0.1
-0.3
-0.3
-0.25
-0.95
µA
µA
V
V
V
V
VCB=-100V
VEB=-4V
IC=-100mA, IB=-1mA*
IC=-200mA, IB=-5mA*
IC=-500mA, IB=-50mA*
IC=-500mA, IB=-50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-0.75
V IC=-500mA, VCE=-2V*
Static Forward Current
hFE 300
800
IC=-10mA, VCE=-2V*
Transfer Ratio
250 IC=-200mA, VCE=-2V*
100 IC=-300mA, VCE=-2V*
3-285
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ZTX795A.PDF ] | |
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