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PDF ZVN1409A Data sheet ( Hoja de datos )
| Número de pieza | ZVN1409A | |
| Descripción | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 90 Volt VDS
* Low input capacitance
* Fast switching
ZVN1409A
D
G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
90
10
40
± 20
625
-55 to +150
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS
90
V ID=0.1mA, VGS=0V
Gate-Source Breakdown
Voltage
VGS(th) 0.8 2.4 V
ID=0.1mA, VDS= VGS
Gate Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
100 nA
1 µA
100 (2) µA
VGS=± 20V, VDS=0V
VDS=90V, VGS=0V
VDS=72V, VGS=0V,
T=125°C
On State Drain Current (1)
Static Drain Source On State
Resistance (1)
ID(on)
RDS(on)
10
mA VDS=25 V, VGS=10V
250 Ω
VGS=10V,ID=5mA
Forward Transconductance (1)( gfs
2)
2
mS VDS=25V,ID=10mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
6.5 pF
3 pF
VDS=25 V, VGS=0V
f=1MHz
Reverse Transfer Capacitance Crss
(2)
0.65 pF
Turn-On Delay Time (2)(3)(4)
Rise Time (2)(3)(4)
Turn-Off Delay Time (2)(3)(4)
Fall Time (2)(3)(4)
td(on)
tr
td(off)
tf
3-358
0.3
0.5
0.35
0.5
ns
ns
ns
ns
VDD ≈25V, ID=5mA
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ZVN1409A.PDF ] | |
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