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PDF ZVN3320F Data sheet ( Hoja de datos )
| Número de pieza | ZVN3320F | |
| Descripción | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – DECEMBER 1995 7
FEATURES
* 200 Volt VDS
* RDS(on)= 25Ω
ZVN3320F
S
D
PARTMARKING DETAIL – MU
G
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS 200 V
Continuous Drain Current at Tamb=25°C
ID
60 mA
Pulsed Drain Current
IDM 1 A
Gate-Source Voltage
VGS ± 20 V
Power Dissipation at Tamb=25°C
Ptot
330 mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
200
V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) 1.0 3.0 V
ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage
Drain Current
IGSS
IDSS
100 nA VGS=± 20V, VDS=0V
10 µA VDS=200V, VGS=0V
50 µA VDS=160V, VGS=0V,
T=125°C(2)
On-State Drain Current(1)
ID(on)
250
Static Drain-Source On-State RDS(on)
Resistance (1)
25
mA VDS=25V, VGS=10V
Ω VGS=10V,ID=100mA
Forward Transconductance(1) gfs
(2)
75
mS VDS=25V,ID=100mA
Input Capacitance (2)
Common Source
Output Capacitance (2)
Ciss
Coss
45 pF
18 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
5 pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
td(on)
tr
td(off)
5 ns
7 ns VDD ≈25V, ID=100mA
6 ns
Fall Time (2)(3)
tf 6 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 398
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