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부품번호 | ZVN4525E6 기능 |
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기능 | 250V N-CHANNEL ENHANCEMENT MODE MOSFET | ||
제조업체 | Zetex Semiconductors | ||
로고 | |||
전체 8 페이지수
250V N-CHANNEL ENHANCEMENT MODE MOSFET
ZVN4525E6
SUMMARY
(
DESCRIPTION
This 250V enhancement mode N-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
SOT89 and SOT223 versions are also available.
FEATURES
• High voltage
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low threshold
• Complementary P-channel Type ZVP4525E6
• SOT23-6 package
APPLICATIONS
• Earth Recall and dialling switches
• Electronic hook switches
• High Voltage Power MOSFET Drivers
• Telecom call routers
• Solid state relays
ORDERING INFORMATION
DEVICE
REEL SIZE TAPE WIDTH (mm) QUANTITY
(inches)
PER REEL
ZVN4525E6TA
7
8mm embossed
3000 units
ZVN4525E6TC
13
8mm embossed
10000 units
DEVICE MARKING
• N52
SOT23-6
Top View
ISSUE 1 - MARCH 2001
1
ZVN4525E6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP.
MAX. UNI CONDITIONS.
T
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
250
0.8
Forward Transconductance (3)
DYNAMIC (3)
gfs 0.3
285
35
±1
1.4
5.6
5.9
6.4
0.475
500
±100
1.8
8.5
9.0
9.5
V ID=1mA, VGS=0V
nA VDS=250V, VGS=0V
nA VGS=±40V, VDS=0V
V
I =1mA,
D
VDS=
VGS
Ω VGS=10V, ID=500mA
Ω VGS=4.5V, ID=360mA
Ω VGS=2.4V, ID=20mA
S VDS=10V,ID=0.3A
Input Capacitance
Output Capacitance
Ciss
Coss
72
11
pF
VDS=25 V, VGS=0V,
pF f=1MHz
Reverse Transfer Capacitance
Crss
3.6
pF
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
1.25
1.70
11.40
3.5
2.6
0.2
0.5
3.65
0.28
0.70
ns
VDD =30V, ID=360mA
ns RG=50Ω, Vqs=10V
(refer to test circuit)
ns
ns
nC
VDS=25V,VGS=10V,
nC ID=360mA(refer to
test circuit)
nC
Diode Forward Voltage (1)
VSD
0.97
Reverse Recovery Time (3)
trr
186 260
Reverse Recovery Charge (3)
Qrr
34 48
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
V Tj=25°C, IS=360mA,
VGS=0V
ns Tj=25°C, IF=360mA,
di/dt= 100A/µs
nC
ISSUE 1 - MARCH 2001
4
4페이지 CHARACTERISTICS
ZVN4525E6
Basic Gate Charge Waveform
Gate Charge Test Circuit
Switching Time Waveforms
Switching Time Test Circuit
ISSUE 1 - MARCH 2001
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ ZVN4525E6.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
ZVN4525E6 | 250V N-CHANNEL ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
ZVN4525E6 | 250V N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |