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PDF ZVNL110G Data sheet ( Hoja de datos )
| Número de pieza | ZVNL110G | |
| Descripción | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 N-CHANNEL ENHANCEMENT MODE
LOW THRESHOLD VERTICAL DMOS FET
ISSUE 2 - FEBRUARY 1996 7
FEATURES
* LOW RDS(ON) - 3Ω
PARTMARKING DETAIL - ZVNL110
ZVNL110G
D
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS 100 V
Continuous Drain Current at Tamb=25°C
ID
600 mA
Pulsed Drain Current
IDM 6 A
Gate-Source Voltage
VGS ± 20 V
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS 100
V ID=1mA, VGS=0V
Gate-Source Threshold Voltage VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain
Current
IDSS
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
ID(on)
RDS(on)
Forward Transconductance(1)(2) gfs
Input Capacitance (2)
Ciss
Common Source Output
Capacitance (2)
Coss
0.75
750
225
1.5
100
10
100
4.5
3.0
75
25
V ID=1mA, VDS= VGS
nA VGS=± 20V, VDS=0V
µA VDS=100V, VGS=0V
µA VDS=80V, VGS=0V, T=125°C(2)
mA VDS=25V, VGS=5V
Ω VGS=5V, ID=250mA
Ω VGS=10V, ID=500mA
mS VDS=25V, ID=500mA
pF
pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crss
Turn-On Delay Time (2)(3)
td(on)
Rise Time (2)(3)
tr
Turn-Off Delay Time (2)(3)
td(off)
Fall Time (2)(3)
tf
8 pF
7 ns
12 ns VDD≈25V, ID=1A, VGS =10V
15 ns
13 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 419
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