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Datasheet ZX36 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | ZX36 | Silicon-Power-Z-Diodes (non-planar technology) ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden)
7
Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse
30 10
12.5 W 3.9…200 V DO-4 5.5 g
Ø2 |  Diotec Semiconductor | diode |
ZX3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | ZX3.9 | Silicon-Power-Z-Diodes (non-planar technology) ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden)
7
Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse
30 10
12.5 W 3.9…200 V DO-4 5.5 g
Ø2 Diotec Semiconductor diode | | |
| 2 | ZX30 | Silicon-Power-Z-Diodes (non-planar technology) ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden)
7
Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse
30 10
12.5 W 3.9…200 V DO-4 5.5 g
Ø2 Diotec Semiconductor diode | | |
| 3 | ZX30-17-5 | Directional Coupler 50 5 to 2000 MHz Coaxial
Directional Coupler
50Ω
Maximum Ratings
Operating Temperature Storage Temperature -40°C to 85°C -55°C to 100°C
! NEW
ZX30-17-5
5 to 2000 MHz
Features
• • • • very flat coupling very broad, multi-octave all welded construction protected by U.S. Patent 6140887 & 6784531
CASE  Mini-Circuits data | | |
| 4 | ZX30-20-4 | Coaxial Directional Coupler Coaxial
Directional Coupler
50Ω
Maximum Ratings
Operating Temperature Storage Temperature -40°C to 85°C -55°C to 100°C
ZX30-20-4
5 to 1000 MHz
Features
• • • • very flat coupling very broad, multi-octave all welded construction protected by U.S. Patent 6,140,887 Mini-Circuits data | | |
| 5 | ZX33 | Silicon-Power-Z-Diodes (non-planar technology) ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden)
7
Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse
30 10
12.5 W 3.9…200 V DO-4 5.5 g
Ø2 Diotec Semiconductor diode | | |
| 6 | ZX36 | Silicon-Power-Z-Diodes (non-planar technology) ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden)
7
Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse
30 10
12.5 W 3.9…200 V DO-4 5.5 g
Ø2 Diotec Semiconductor diode | | |
| 7 | ZX39 | Silicon-Power-Z-Diodes (non-planar technology) ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden)
7
Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse
30 10
12.5 W 3.9…200 V DO-4 5.5 g
Ø2 Diotec Semiconductor diode | |
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