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부품번호 | ZX5T853GTA 기능 |
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기능 | 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 | ||
제조업체 | Zetex Semiconductors | ||
로고 | |||
전체 6 페이지수
ZX5T853G
100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR
IN SOT223
SUMMARY
BVCEO = 100V : RSAT = 36m ; IC = 6A
DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN
transistor offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
FEATURES
• 6 amps continuous current
• Up to 10 amps peak current
• Very low saturation voltages
APPLICATIONS
• Motor driving
• Line switching
• High side switches
• Subscriber line interface cards (SLIC)
SOT223
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
ZX5T853GTA
ZX5T853GTC
7” 12mm
13” embossed
QUANTITY PER
REEL
1000 units
4000 units
DEVICE MARKING
• X5T853
ISSUE 2 - SEPTEMBER 2003
1
PINOUT
TOP VIEW
SEMICONDUCTORS
ZX5T853G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
R Յ 1k⍀
IEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
HFE
fT
200 235
V IC=100A
200 235
V IC=1A, RBՅ1k⍀
100 115
V IC=10mA*
7 8.1
V IE=100A
20 nA VCB=150V
0.5 A VCB=150V,Tamb=100ЊC
20 nA VCB=150V
0.5 A VCB=150V,Tamb=100ЊC
10 nA VEB=6V
21 35 mV IC=0.1A, IB=5mA*
50 65 mV IC=1A, IB=100mA*
95 125 mV IC=2A, IB=100mA*
180 220 mV IC=5A, IB=500mA*
1020 1120 mV IC=5A, IB=500mA*
920 1000 mV IC=5A, VCE=2V*
100 230
IC=10mA, VCE=2V*
100 200 300
IC=2A, VCE=2V*
30 60
IC=5A, VCE=2V*
10 20
IC=10A, VCE=2V*
130 MHz IC=100mA, VCE=10V
f=50MHz
Output capacitance
Switching times
COBO
tON
tOFF
26
41
1010
pF VCB=10V, f=1MHz*
ns IC=1A, VCC=10V,
IB1=IB2=100mA
* Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ2%.
SEMICONDUCTORS
ISSUE 2 - SEPTEMBER 2003
4
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ ZX5T853GTA.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
ZX5T853GTA | 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 | Zetex Semiconductors |
ZX5T853GTC | 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 | Zetex Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |