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Datasheet ZX5T853GTC Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | ZX5T853GTC | 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 ZX5T853G
100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits |  Zetex Semiconductors | transistor |
ZX5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | ZX5.1 | Silicon-Power-Z-Diodes (non-planar technology) ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden)
7
Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse
30 10
12.5 W 3.9…200 V DO-4 5.5 g
Ø2  Diotec Semiconductor diode | | |
| 2 | ZX5.6 | Silicon-Power-Z-Diodes (non-planar technology) ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden)
7
Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse
30 10
12.5 W 3.9…200 V DO-4 5.5 g
Ø2 Diotec Semiconductor diode | | |
| 3 | ZX51 | Silicon-Power-Z-Diodes (non-planar technology) ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden)
7
Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse
30 10
12.5 W 3.9…200 V DO-4 5.5 g
Ø2 Diotec Semiconductor diode | | |
| 4 | ZX56 | Silicon-Power-Z-Diodes (non-planar technology) ZX 3.9 ... ZX 200 (12.5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden)
7
Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Metal case – Metallgehäuse
30 10
12.5 W 3.9…200 V DO-4 5.5 g
Ø2 Diotec Semiconductor diode | | |
| 5 | ZX5T1951G | PNP MEDIUM POWER TRANSISTOR Features
• BVCEO > -60V • IC = -6A Continuous Collector Current • Low Saturation Voltage VCE(sat) < -95mV max @ -1A • RCE(sat) = 40mΩ for a low Equivalent On-Resistance • hFE Specified up to -10A for a High Gain Hold-Up • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and A  Diodes transistor | | |
| 6 | ZX5T849G | 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 ZX5T849G
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and variou Zetex Semiconductors transistor | | |
| 7 | ZX5T849GTA | 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 ZX5T849G
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and variou Zetex Semiconductors transistor | |
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