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부품번호 | K2139 기능 |
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기능 | MOS Field Effect Transistor | ||
제조업체 | NEC | ||
로고 | |||
전체 8 페이지수
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2139
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2139 is N-Channel Power MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)
• Low Ciss Ciss = 930 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 (MP-45F) Package
PACKAGE DIMENSIONS
(in millimeters)
10.0±0.3
4.5±0.2
3.2±0.2
2.7±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 600 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±5.0
A
Drain Current (pulse)*
ID(pulse) ±20
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
35 W
Total Power Dissipation (TA = 25 ˚C)
PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 5.0 A
Single Avalanche Energy**
EAS 8.3 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
0.7±0.1
2.54
1.3±0.2
1.5±0.2
2.54
123
2.5±0.1
0.65±0.1
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
Source
Document No. TC-2512
(O. D. No. TC-8071)
Date Published January 1995 P
Printed in Japan
© 1995
2SK2139
1 000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth (ch-a) = 62.5 (˚C/W)
10
Rth (ch-c) = 3.57 (˚C/W)
1
0.1
0.01
0.001
10µ 100 µ 1 m 10 m 100 m
1
PW - Pulse Width - s
TC = 25 ˚C
Single Pulse
10 100 1 000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
Tch = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
1.0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
2.0
ID = 5 A
2.5 A
1.0
VDS = 10 V
Pulsed
0.1
1.0
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
4.0
Pulsed
2.0
VGS = 10 V
20 V
1.0 10 100
ID - Drain Current - A
04
8 12 16 20
VGS - Gate to Source Voltage (V)
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
4.0
3.0
2.0
1.0
VDS = 10 V
0 ID = 1mA
–50 0
50 100
Tch - Channel Temperature - ˚C
150
4
4페이지 2SK2139
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system.
Quality grade on NEC semiconductor devices.
Semiconductor device mounting technology manual.
Semiconductor device package manual.
Guide to quality assurance for semiconductor devices.
Semiconductor selection guide.
Power MOS FET features and application switching power supply.
Application circuits using Power MOS FET.
Safe operating area of Power MOS FET.
Document No.
TEI-1202
IEI-1209
IEI-1207
IEI-1213
MEI-1202
MF-1134
TEA-1034
TEA-1035
TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
7
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부품번호 | 상세설명 및 기능 | 제조사 |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |