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TDA1072A 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 TDA1072A은 전자 산업 및 응용 분야에서
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부품번호 TDA1072A 기능
기능 AM receiver circuit
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TDA1072A 데이터시트, 핀배열, 회로
INTEGRATED CIRCUITS
DATA SHEET
TDA1072A
AM receiver circuit
Product specification
File under Integrated Circuits, IC01
May 1984




TDA1072A pdf, 반도체, 판매, 대치품
Philips Semiconductors
AM receiver circuit
Product specification
TDA1072A
FUNCTIONAL DESCRIPTION
Gain-controlled r.f. stage and mixer
The differential amplifier in the r.f. stage employs an a.g.c. negative feedback network to provide a wide dynamic range.
Very good cross-modulation behaviour is achieved by a.g.c. delays at the various signal stages. Large signals are
handled with low distortion and the S/N ratio of small signals is improved. Low noise working is achieved in the differential
amplifier by using transistors with low base resistance.
A double balanced mixer provides the i.f. output signal to pin 1.
Oscillator
The differential amplifier oscillator is temperature compensated and is suitable for simple coil connection. The oscillator
is voltage-controlled and has little distortion or spurious radiation. It is specially suitable for electronic tuning using
variable capacitance diodes. Band switching diodes can easily be applied using the stabilized voltage V11-16. An extra
buffered oscillator output (pin 10) is available for driving a synthesizer. If this is not needed, resistor RL(10) can be omitted.
Gain-controlled i.f. amplifier
This amplifier comprises two cascaded, variable-gain differential amplifier stages coupled by a band-pass filter. Both
stages are gain-controlled by the a.g.c. negative feedback network.
Detector
The full-wave, balanced envelope detector has very low distortion over a wide dynamic range. Residual i.f. carrier is
blocked from the signal path by an internal low-pass filter.
A.F. preamplifier
This stage preamplifies the audio frequency output signal. The amplifier output has an emitter follower with a series
resistor which, together with an external capacitor, yields the required low-pass for a.f. filtering.
A.G.C. amplifier
The a.g.c. amplifier provides a control voltage which is proportional to the carrier amplitude. Second-order filtering of the
a.g.c. voltage achieves signals with very little distortion, even at low audio frequencies. This method of filtering also gives
fast a.g.c. settling time which is advantageous for electronic search tuning. The a.g.c. settling time can be further reduced
by using capacitors of smaller value in the external filter (C16 and C17). The a.g.c. voltage is fed to the r.f. and i.f. stages
via suitable a.g.c. delays. The capacitor at pin 7 can be omitted for low-cost applications.
Field strength indicator output
A buffered voltage source provides a high-level field strength output signal which has good linearity for logarithmic input
signals over the whole dynamic range. If the field strength information is not needed, RL(9) can be omitted.
Standby switch
This switch is primarily intended for AM/FM band switching. During standby mode the oscillator, mixer and a.f.
preamplifier are switched off.
Short-circuit protection
All pins have short-circuit protection to ground.
May 1984
4

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TDA1072A 전자부품, 판매, 대치품
Philips Semiconductors
AM receiver circuit
Product specification
TDA1072A
PARAMETER
Standby switch
Switching threshold at VP = 7,5 to 18 V;
Tamb = 40 to + 80 °C
on-voltage
off-voltage
on-current at V2-16 = 0 V
off-current at V2-16 = 20 V
SYMBOL
MIN. TYP. MAX. UNIT
V2-16
V2-16
I2
I2
0 2,0 V
3,5 20 V
− − 200 µA
− − 10 µA
OPERATING CHARACTERISTICS
VP = 8,5 V; fi = 1 MHz; m = 30%; fm = 400 Hz; Tamb = 25 °C; measured in Fig.1; unless otherwise specified
PARAMETER
SYMBOL
MIN. TYP. MAX.
R.F. sensitivity
R.F. input required for S + N/N = 6 dB
R.F. input required for S + N/N = 26 dB
R.F. input required for S + N/N = 46 dB
R.F. input at start of a.g.c.
R.F. large signal handling
R.F. input at THD = 3%; m = 80%
R.F. input at THD = 3%; m = 30%
R.F. input at THD = 10%; m = 30%
A.G.C. range
Change of Vi for 1 dB change
of Vo(af); Vi(ref) = 500 mV
Change of Vi for 6 dB change
of Vo(af); Vi(ref) = 500 mV
Output signal
A.F. output voltage at
Vi = 4 µV; m = 80%
A.F. output voltage at Vi = 1 mV
THD at Vi = 1 mV; m = 80%
THD at Vi = 500 mV; m = 30%
Signal-to-noise ratio at Vi = 100 mV
Ripple rejection at Vi = 2 mV;
VP(rms) = 100 mV; fP = 100 Hz
(RR = 20 log [VP/Vo(af)])
Vi
Vi
Vi
Vi
Vi
Vi
Vi
Vi
Vi
Vo(af)
Vo(af)
dtot
dtot
(S + N)/N
RR
1,5
15
150
30
500
700
900
86
91
130
240 310 390
0,5
1
58
38
UNIT
µV
µV
µV
µV
mV
mV
mV
dB
dB
mV
mV
%
%
dB
dB
May 1984
7

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