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TDA1072AT 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 TDA1072AT은 전자 산업 및 응용 분야에서
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부품번호 TDA1072AT 기능
기능 AM receiver circuit
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TDA1072AT 데이터시트, 핀배열, 회로
INTEGRATED CIRCUITS
DATA SHEET
TDA1072AT
AM receiver circuit
Product specification
File under Integrated Circuits, IC01
March 1989




TDA1072AT pdf, 반도체, 판매, 대치품
Philips Semiconductors
AM receiver circuit
Product specification
TDA1072AT
FUNCTIONAL DESCRIPTION
Gain-controlled RF stage and mixer
The differential amplifier in the RF stage employs an AGC negative feedback network to provide a wide dynamic range.
Very good cross-modulation behaviour is achieved by AGC delays at the various signal stages. Large signals are
handled with low distortion and the S/N ratio of small signals is also improved. Low noise working is achieved in the
differential amplifier by using transistors with a low base resistance.
A double balanced mixer provides the IF output to pin 1.
Oscillator
The differential amplifier oscillator is temperature compensated and is suitable for simple coil connection. The oscillator
is voltage-controlled and has little distortion or spurious radiation. It is specially suitable for electronic tuning using
variable capacitance diodes. Band switching diodes can easily be applied using the stabilized voltage V11-16. An extra
buffered oscillator output is available for driving a synthesizer. If this is not needed, resistor RL(10) can be omitted.
Gain-controlled IF amplifier
This amplifier comprises two cascaded, variable-gain differential amplifier stages coupled by a band-pass filter. Both
stages are gain-controlled by the AGC negative feedback network.
Detector
The full-wave, balanced envelope detector has very low distortion over a wide dynamic range. The residual IF carrier is
blocked from the signal path by an internal low-pass filter.
AF preamplifier
This stage preamplifies the audio frequency output. The amplifier output stage uses an emitter follower with a series
resistor which, together with an external capacitor, provides the required low-pass filtering for AF signals.
AGC amplifier
The AGC amplifier provides a control voltage which is proportional to the carrier amplitude. Second-order filtering of the
AGC voltage achieves signals with very little distortion, even at low audio frequencies. This method of filtering also gives
a fast AGC settling time which is advantageous for electronic search tuning. The AGC settling time can be further
reduced by using capacitors of smaller value in the external filter. The AGC voltage is fed to the RF and IF stages via
suitable AGC delays. The capacitor at pin 7 can be omitted for low-cost applications.
Field strength indicator output
A buffered voltage source provides a high-level field strength output signal which has good linearity for logarithmic input
signals over the whole dynamic range. If field strength information is not needed, RL(9) can be omitted.
Standby switch
This switch is primariIy intended for AM/FM band switching. During standby mode the oscillator, mixer and demodulator
are switched off.
Short-circuit protection
All pins have short-circuit protection to ground.
March 1989
4

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TDA1072AT 전자부품, 판매, 대치품
Philips Semiconductors
AM receiver circuit
PARAMETER
Source voltage for switching
diodes (6 × VBE)
DC output current (for
switching diodes)
Change of output voltage at
I11 = 20 mA (switch to
maximum load)
Buffered oscillator output
DC output voltage
Output signal amplitude
(peak-to-peak value)
Output impedance
Output current
IF, AGC and AF stages
DC input voltage
IF input impedance
IF input voltage for
THD = 3% at m = 80%
Voltage gain before start
of AGC
AGC range of IF stages:
change of V3-4 for 1 dB
change of VO(AF);
V3-4(ref) = 75 mV
AF output voltage at
V3-4(IF) = 50 µV
AF output voltage at
V3-4(IF) = 1 mV
AF output impedance (pin 6)
Indicator driver
Output voltage at
VI = 0 mV
Output voltage at
VI = 500 mV
Load resistance
Product specification
TDA1072AT
CONDITIONS
SYMBOL MIN. TYP. MAX. UNIT
V11 4.2 V
VP = V13
9V
I11
0 5 mA
V11
V10
V10(p-p)
R10
I10(peak)
V3-4
R3-4
C3-4
V3-4
V3-4/V6
0.5 V
0.7 V
320 mV
170 − Ω
− − −3 mA
2V
2.4 3.0 3.9 k
7 pF
90 mV
68 dB
V3-4
VO(AF)
VO(AF)
ZO
55 dB
130 mV
310 mV
3.5 k
RL(9) = 2.7 k
RL(9) = 2.7 k
V9
V9
RL(9)
20 150 mV
2.5 2.8 3.1 V
2.7 − − k
March 1989
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