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부품번호 | TDA1516 기능 |
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기능 | 24 W BTL or 2 x 12 watt stereo car radio power amplifier | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 11 페이지수
INTEGRATED CIRCUITS
DATA SHEET
TDA1516BQ
24 W BTL or 2 x 12 watt stereo car
radio power amplifier
Product specification
File under Integrated Circuits, IC01
July 1994
Philips Semiconductors
24 W BTL or 2 x 12 watt stereo car radio
power amplifier
Product specification
TDA1516BQ
PINNING
1 −INV1 non-inverting input 1
2 INV inverting input
3 GND1 ground (signal)
4 Vref reference voltage
5 OUT1 output 1
6 BS1 bootstrap 1
7 GND2 ground (substrate)
8 BS2 bootstrap 2
9 OUT2 output 2
10 VP
supply voltage
11 M/SS mute/stand-by switch
12 RR supply voltage ripple rejection
13 −INV2 non-inverting input 2
FUNCTIONAL DESCRIPTION
The TDA1516BQ contains two identical amplifiers with differential input stages. This device can be used for stereo or
bridge applications. The gain of each amplifier is fixed at 20 dB. A special feature of this device is the mute/stand-by
switch which has the following features:
• low stand-by current (< 100 µA)
• low mute/stand-by switching current (low cost supply switch)
• mute condition.
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
PARAMETER
Supply voltage
operating
non-operating
load dump protected
A.C. and d.c. short-circuit-
safe voltage
Reverse polarity
Energy handling capability
at outputs
Non-repetitive peak output
current
Repetitive peak output
current
Total power dissipation
Crystal temperature
Storage temperature range
CONDITIONS
SYMBOL
MIN.
during 50 ms;
tr ≥ 2,5 ms
VP = 0 V
see Fig.2
VP
VP
VP
VPSC
VPR
IOSM
IORM
Ptot
Tc
Tstg
−
−
−
−
−
−
−
−
−
−
−55
MAX.
UNIT
18 V
30 V
45 V
18 V
6V
200 mJ
6A
4
25
150
+ 150
A
W
°C
°C
July 1994
4
4페이지 Philips Semiconductors
24 W BTL or 2 x 12 watt stereo car radio
power amplifier
Product specification
TDA1516BQ
A.C. CHARACTERISTICS
VP = 14,4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; unless otherwise specified
PARAMETER
CONDITIONS
SYMBOL
MIN.
Stereo application
note 1
Output power
Output power at
RL = 2 Ω
Low frequency roll-off
High frequency roll-off
Closed loop voltage gain
Supply voltage ripple
rejection:
ON
mute
stand-by
Input impedance
Noise output voltage:
ON
ON
mute
Channel separation
Channel balance
note 4;
THD = 0,5%
THD = 10%
notes 4 and 5;
THD = 10%
note 4;
THD = 0,5%
THD = 10%
notes 4 and 5;
THD = 10%
note 6;
−3 dB
−1 dB
note 7
note 8;
RS = 0 Ω
RS = 10 kΩ
note 9
RS = 10 kΩ
Po 4
Po 5,5
Po 6
Po 7.5
Po 10
Po 10,5
fL −
fH 20
Gv 19
RR
RR
RR
|ZI|
Vno(rms)
Vno(rms)
Vno(rms)
α
Gv
48
48
80
50
−
−
−
40
−
TYP.
5
6,0
7
8,5
11
12,0
45
−
20
−
−
−
60
50
70
50
−
−
MAX. UNIT
−W
−W
−W
−W
−W
−W
− Hz
− kHz
21 dB
− dB
− dB
− dB
75 kΩ
− µV
100 µV
− µV
− dB
1 dB
July 1994
7
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ TDA1516.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
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