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Número de pieza | APT12057B2LL | |
Descripción | Power MOS 7 MOSFET | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APT12057B2LL (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! APT12057B2LL(G)
APT12057LLL(G)
1200V 22A 0.570Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7 R MOSFET
B2LL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed
and Qg. Power MOS
with Power MOS 7® by significantly lowering
7® combines lower conduction and switching
RDS(ON)
losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
T-MAX™
TO-264
LLL
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
• Increased Power Dissipation
D
• Easier To Drive
G
• Popular T-MAX™ or TO-264 Package
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
APT12057(G)
1200
22
88
±30
±40
690
5.52
-55 to 150
300
22
50
3000
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
MIN
1200
22
3
TYP MAX
0.570
100
500
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet APT12057B2LL.PDF ] |
Número de pieza | Descripción | Fabricantes |
APT12057B2LL | Power MOS 7 MOSFET | Advanced Power Technology |
APT12057B2LLG | Power MOS 7 MOSFET | Advanced Power Technology |
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