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PDF APT5010LLL Data sheet ( Hoja de datos )
| Número de pieza | APT5010LLL | |
| Descripción | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de APT5010LLL (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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APT5010B2LL
APT5010LLL
500V 46A 0.100W
POWER MOS 7TM
B2LL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
T-MAX™
TO-264
LLL
D
• Lower Miller Capacitance • Easier To Drive
G
• Lower Gate Charge, Qg • Popular T-MAX™ or TO-264 Package
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
APT5010
Drain-Source Voltage
500
Continuous Drain Current @ TC = 25°C
LPulsed Drain Current 1
ICAGate-Source Voltage Continuous
NGate-Source Voltage Transient
HTotal Power Dissipation @ TC = 25°C
EC NLinear Derating Factor
T IOOperating and Storage Junction Temperature Range
E TLead Temperature: 0.063" from Case for 10 Sec.
NC MAAvalanche Current 1 (Repetitive and Non-Repetitive)
VA RRepetitive Avalanche Energy 1
AD INFOSingle Pulse Avalanche Energy 4
46
184
±30
±40
500
4.0
-55 to 150
300
46
50
1800
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
500
46
3
0.100
25
250
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet APT5010LLL.PDF ] | |
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