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PDF APT5014 Data sheet ( Hoja de datos )
| Número de pieza | APT5014 | |
| Descripción | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de APT5014 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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APT5014BLL
APT5014SLL
500V 35A 0.140W
POWER MOS 7TM
BLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
TO-247
D3PAK
SLL
D
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg
• TO-247 or Surface Mount D3PAK Package
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
APT5014
Drain-Source Voltage
LContinuous Drain Current @ TC = 25°C
ICAPulsed Drain Current 1
NGate-Source Voltage Continuous
HGate-Source Voltage Transient
EC NTotal Power Dissipation @ TC = 25°C
T IOLinear Derating Factor
E TOperating and Storage Junction Temperature Range
NC MALead Temperature: 0.063" from Case for 10 Sec.
VA RAvalanche Current 1 (Repetitive and Non-Repetitive)
D FORepetitive Avalanche Energy 1
A INSingle Pulse Avalanche Energy 4
500
35
140
±30
±40
400
3.2
-55 to 150
300
32
30
1300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
MIN
500
35
3
TYP MAX UNIT
Volts
Amps
0.140 Ohms
25
µA
250
±100 nA
5 Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet APT5014.PDF ] | |
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