|
|
PDF APT5014LLC Data sheet ( Hoja de datos )
| Número de pieza | APT5014LLC | |
| Descripción | Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de APT5014LLC (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
APT5014B2LC
APT5014LLC
500V 37A 0.140W
POWER MOS VITM
B2LC
Power MOS VITM is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize Ciss and Crss.
Lower gate charge coupled with Power MOS VITM optimized gate layout,
delivers exceptionally fast switching speeds.
T-MAX™
TO-264
LLC
• Identical Specifications: T-MAX™ or TO-264 Package
D
• Lower Gate Charge & Capacitance
• 100% Avalanche Tested
• Easier To Drive
• Faster switching
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
ALContinuous Drain Current @ TC = 25°C
ICPulsed Drain Current 1
NGate-Source Voltage Continuous
CHGate-Source Voltage Transient
TE NTotal Power Dissipation @ TC = 25°C
D IOLinear Derating Factor
E TOperating and Storage Junction Temperature Range
NC MALead Temperature: 0.063" from Case for 10 Sec.
A RAvalanche Current 1 (Repetitive and Non-Repetitive)
V ORepetitive Avalanche Energy 1
AD INFSingle Pulse Avalanche Energy 4
APT5014
500
37
148
±30
±40
450
3.6
-55 to 150
300
37
35
1600
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
MIN
500
37
3
TYP MAX UNIT
Volts
Amps
0.140 Ohms
25
µA
250
±100 nA
5 Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet APT5014LLC.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| APT5014LLC | Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. | Advanced Power Technology |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |