|
|
PDF APT50GF60B2RD Data sheet ( Hoja de datos )
| Número de pieza | APT50GF60B2RD | |
| Descripción | The Fast IGBT is a new generation of high voltage power IGBTs. | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de APT50GF60B2RD (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
APT50GF60B2RD
APT50GF60LRD
600V 80A
APT50GF60B2RD
Fast IGBT & FRED
The Fast IGBT™ is a new generation of high voltage power IGBTs. Using Non-
T-Max™
(B2RD)
Punch Through Technology the Fast IGBT™ combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
• Low Forward Voltage Drop
• Low Tail Current
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
G
C
E
G
C
C
E
TO-264
(LRD)
APT50GF60LRD
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
MAXIMUM RATINGS (IGBT)
G
E
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT50GF60B2RD/LRD UNIT
VCES
VCGR
VGE
I C1
I C2
I CM1
I CM2
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20KΩ)
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 90°C
Pulsed Collector Current 1 @ TC = 25°C
Pulsed Collector Current 1 @ TC = 90°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
600
±20
80
50
160
100
300
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol Characteristic / Test Conditions
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.50mA)
Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
MIN TYP MAX UNIT
600
4.5 5.5 6.5
Volts
2.1 2.7
2.2 2.8
0.50
TBD
mA
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702 -1035 Phone: (541) 382-8028
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
1 page  
APT50GF60B2RD/LRD
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
MAXIMUM RATINGS (FRED)
All Ratings: TC = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions
APT50GF60B2RD/LRD UNIT
VR
VRRM
VRWM
IF(AV)
IF(RMS)
IFSM
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (TC = 85°C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
600 Volts
60
100 Amps
600
STATIC ELECTRICAL CHARACTERISTICS (FRED)
Symbol Characteristic / Test Conditions
VF Maximum Forward Voltage
IF = 60A
IF = 120A
IF = 60A, TJ = 150°C
MIN TYP MAX UNIT
1.8
1.75
Volts
1.5
DYNAMIC CHARACTERISTICS (FRED)
Symbol Characteristic
trr1
trr2
trr3
tfr1
tfr2
IRRM1
IRRM2
Qrr1
Qrr2
Vfr1
Vfr2
diM / dt
Reverse Recovery Time, IF = 1.0A, diF/dt = -15A/µs, VR = 30V, TJ = 25°C
Reverse Recovery Time
TJ = 25°C
IF = 60A, diF/dt = -480A/µs, VR = 350V
TJ = 100°C
Forward Recovery Time
TJ = 25°C
IF = 60A, diF/dt = 480A/µs, VR = 350V
TJ = 100°C
Reverse Recovery Current
TJ = 25°C
IF = 60A, diF/dt = -480A/µs, VR = 350V
TJ = 100°C
Recovery Charge
TJ = 25°C
IF = 60A, diF/dt = -480A/µs, VR = 350V
TJ = 100°C
Forward Recovery Voltage
TJ = 25°C
IF = 60A, diF/dt = 480A/µs, VR = 350V
TJ = 100°C
Rate of Fall of Recovery Current
TJ = 25°C
IF = 60A, diF/dt = -480A/µs, VR = 350V
TJ = 100°C
MIN
TYP
55
70
90
160
160
10
20
350
900
6
6
800
500
MAX
70
UNIT
ns
17
Amps
30
nC
Volts
A/µs
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet APT50GF60B2RD.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| APT50GF60B2RD | The Fast IGBT is a new generation of high voltage power IGBTs. | Advanced Power Technology |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |