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PDF APT50GF60BR Data sheet ( Hoja de datos )

Número de pieza APT50GF60BR
Descripción The Fast IGBT is a new generation of high voltage power IGBTs.
Fabricantes Advanced Power Technology 
Logotipo Advanced Power Technology Logotipo



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No Preview Available ! APT50GF60BR Hoja de datos, Descripción, Manual

APT50GF60BR
APT50GF60BR
600V 75A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop
• Low Tail Current
• Avalanche Rated
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
TO-247
G
C
E
G
C
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT50GF60BR
UNIT
VCES
VCGR
VGE
I C1
I C2
I CM
I LM
EAS
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20KW)
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 90°C
Pulsed Collector Current 1 @ TC = 25°C
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C
Single Pulse Avalanche Energy 2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
600
±20
75
50
160
100
75
300
-55 to 150
300
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.0mA)
Gate Threshold Voltage (VCE = VGE, IC = 700µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
600
4.5 5.5 6.5
2.1 2.7
2.2 2.8
0.5
5.0
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
mA
nA
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61

1 page




APT50GF60BR pdf
APT50GF60BR
A 10%
td(on)
90%
VCC PInrdeu-Ccthoarrge
10%
IC
D.U.T. VCE(SAT)
tr
90%
td(off)
IC
tf
Eon
VCLAMP
DRIVER*
10
90%
10%
Eoff
VCC
100uH
A
10
*DRIVER SAME TYPE AS D.U.T.
VCC = 0.66 VCES
Ets = Eon + Eoff
Figure 16, Switching Loss Test Circuit and Waveforms
IC
D.U.T.
2 VCE(off)
90%
10%
1 VGE(off)
td(on)
VGE(on)
VCC
0.1 F
1KV
50 F
600V
VCE(on)
tr td(off)
tf
From
Gate Drive
Circuitry
RG = 10 Ohms
1
Figure 17, Resistive Switching Time Test Circuit and Waveforms
RL =
.66 VCES
I C2
2
D.U.T.
T0-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.55 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT Reserves the right to change, without notice, the specifications and information contained herein.
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
(Cathode)
Emitter
(Anode)

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