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Número de pieza | APT8014L2FLL | |
Descripción | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APT8014L2FLL (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! APT8014L2FLL
800V 52A 0.140W
POWER MOS 7TM FREDFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
TO-264
Max
D
• Lower Miller Capacitance • Easier To Drive
G
• Lower Gate Charge, Qg • Popular TO-264 MAX Package
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
APT8014L2FLL
Drain-Source Voltage
800
Continuous Drain Current @ TC = 25°C
LPulsed Drain Current 1
ICAGate-Source Voltage Continuous
NGate-Source Voltage Transient
HTotal Power Dissipation @ TC = 25°C
EC NLinear Derating Factor
T IOOperating and Storage Junction Temperature Range
E TLead Temperature: 0.063" from Case for 10 Sec.
NC MAAvalanche Current 1 (Repetitive and Non-Repetitive)
VA RRepetitive Avalanche Energy 1
AD INFOSingle Pulse Avalanche Energy 4
52
208
±30
±40
890
7.12
-55 to 150
300
52
50
3200
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
800
52
3
0.140
250
1000
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet APT8014L2FLL.PDF ] |
Número de pieza | Descripción | Fabricantes |
APT8014L2FLL | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. | Advanced Power Technology |
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