Datasheet.kr   

FRS234H 데이터시트 PDF




Intersil에서 제조한 전자 부품 FRS234H은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 FRS234H 자료 제공

부품번호 FRS234H 기능
기능 5A/ 250V/ 0.715 Ohm/ Rad Hard/ N-Channel Power MOSFETs
제조업체 Intersil
로고 Intersil 로고


FRS234H 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 6 페이지수

미리보기를 사용할 수 없습니다

FRS234H 데이터시트, 핀배열, 회로
June 1998
FRS234D, FRS234R,
FRS234H
5A, 250V, 0.715 Ohm, Rad Hard,
N-Channel Power MOSFETs
Features
• 5A, 250V, RDS(on) = 0.715
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
• Gamma Dot
• Photo Current
• Neutron
- Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
- 4.0nA Per-RAD(Si)/sec Typically
- Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Description
The Intersil Corporation has designed a series of SECOND GENERATION hard-
ened power MOSFETs of both N and P channel enhancement types with ratings
from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose
hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness
ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose
rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and
2E12 with current limiting.
Package
TO-257AA
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
Symbol
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Specified
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain-Gate Voltage (RGS = 20k). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
4-1
FRS234D, R, H
250
250
5
3
15
±20
50
20
0.40
15
5
15
-55 to +150
300
UNITS
V
V
A
A
A
V
W
W
W/oC
A
A
A
oC
oC
File Number 3251.2




FRS234H pdf, 반도체, 판매, 대치품
FRS234D, FRS234R, FRS234H
Typical Performance Characteristics
4-4

4페이지












구       성 총 6 페이지수
다운로드[ FRS234H.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
FRS234D

5A/ 250V/ 0.715 Ohm/ Rad Hard/ N-Channel Power MOSFETs

Intersil
Intersil
FRS234H

5A/ 250V/ 0.715 Ohm/ Rad Hard/ N-Channel Power MOSFETs

Intersil
Intersil

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵