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FRX130R 데이터시트 PDF




Intersil에서 제조한 전자 부품 FRX130R은 전자 산업 및 응용 분야에서
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부품번호 FRX130R 기능
기능 Radiation Hardened N-Channel Power MOSFETs
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FRX130R 데이터시트, 핀배열, 회로
April 1998
FRX130D, FRX130R,
FRX130H
Radiation Hardened
N-Channel Power MOSFETs
Features
Description
• 6A, 100V, rDS(ON) = 0.180
• Second Generation Rad Hard MOSFET Results From
New Design Concepts
• Gamma
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Defined End-Point Specs at 300K RAD (Si) and
1000K RAD (Si)
- Performance Permits Limited Use to 3000K RAD (Si)
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 1.50nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Ordering Information
PART NUMBER
PACKAGE
BRAND
The Intersil has designed a series of SECOND GENERA-
TION hardened power MOSFETs of both N-Channel and
P-Channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25m. Total
dose hardness is offered at 100K RAD (Si) and 1000K RAD
(Si) with neutron hardness ranging from 1E13n/cm2 for
500V product to 1E14n/cm2 for 100V product. Dose rate
hardness (GAMMA DOT) exists for rates to 1E9 without
current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to exhibit mini-
mal characteristic changes to total dose (GAMMA) and
neutron (no) exposures. Design and processing efforts are
also directed to enhance survival to heavy ion (SEU) and/or
dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages
other than shown above. Reliability screening is available
as either non TX (commercial), TX equivalent of MIL-S-
19500, TXV equivalent of MIL-S-19500, or space equiva-
lent of MIL-S-19500. Contact the Intersil High-Reliability
Marketing group for any desired deviations from the data
sheet.
FRX130D1
FRX130D3
FRX130R1
18 Ld CLCC
18 Ld CLCC
18 Ld CLCC
FRX130D1
FRX130D3
FRX130R1
Symbol
D
FRX130R3
FRX130R4
18 Ld CLCC
18 Ld CLCC
FRX130R3
FRX130R4
G
FRX130H4
18 Ld CLCC
FRX130H4
S
Package
18 LEAD CLCC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 3144.3




FRX130R pdf, 반도체, 판매, 대치품
FRX130D, FRX130R, FRX130H
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
CURRENT
TRANSFORMER
+
IAS
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS 20V
50
tP
0V
50
DUT
+
VDD
-
50V-150V
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 7. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 8. UNCLAMPED ENERGY WAVEFORMS
VGS = 12V
0V
VDD
RGS
RL
VDS
DUT
FIGURE 9. RESISTIVE SWITCHING TEST CIRCUIT
VDS
tON
tD(ON)
tR
90%
tOFF
tD(OFF)
tF
90%
10%
10%
VGS
10%
50%
PULSE WIDTH
90%
50%
FIGURE 10. RESISTIVE SWITCHING WAVEFORMS
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