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부품번호 | HYS72V4220GU-8-3 기능 |
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기능 | 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module | ||
제조업체 | Siemens | ||
로고 | |||
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module
3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
168 pin unbuffered DIMM Modules
HYS64/72V2200GU-8/-10
HYS64/72V4220GU-8/-10
• 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules
for PC main memory applications
• 1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Fully PC board layout compatible to INTELs’ Rev. 1.0 module specification
• SDRAM Performance:
fCK Clock frequency (max.)
tAC Clock access time
• Programmed Latencies :
-8 -8-3 -10
100 100
66
66
8
Units
MHz
ns
Product Speed
-8 PC100
-8-3 PC100
-10 PC66
CL
2
3
2
tRCD
2
2
2
tRP
2
3
2
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes 2M x 8 SDRAMs in TSOPII-44 packages
• 4096 refresh cycles every 64 ms
• 133,35 mm x 31.75 mm x 4,00 mm card size with gold contact pads
Semiconductor Group
1
6.98
HYS64(72)V2200/4220GU-8/-10
SDRAM-Modules
WE
CS0
DQMB0
DQ(7:0)
CS WE
DQM
DQ0-DQ7
D0
DQMB4
DQ(39:32)
CS WE
DQM
DQ0-DQ7
D4
DQMB1
DQ(15:8)
CS WE
DQM
DQ0-DQ7
D1
DQMB5
DQ(47:40)
CS WE
DQM
DQ0-DQ7
D5
CB(7:0)
CS2
DQMB2
DQ(23:16)
CS WE
DQM
DQ0-DQ7
D8
CS WE
DQM
DQ0-DQ7
D2
DQMB6
DQ(55:48)
CS WE
DQM
DQ0-DQ7
D6
DQMB3
DQ(31:24)
CS WE
DQM
DQ0-DQ7
D3
DQMB7
DQ(63:56)
CS WE
DQM
DQ0-DQ7
D7
A0-A10,BA
D0 - D7,(D8)
E2PROM (256wordx8bit)
VCC
VSS
RAS
D0 - D7,(D8)
C0-C7,(C8)
D0 - D7,(D8)
D0 - D7,(D8)
SA0
SA1
SA2
SCL
SA0
SA1
SA2
SCL
SDA
WP
47k
CAS
D0 - D7,(D8)
CKE0
D0 - D7,(D8)
Note: D8 is only used in the x72 ECC version
Clock Wiring
2M x 64
2M x 72
CLK0 4 SDRAM+3.3pF 5 SDRAM
CLK1 Termination
Termination
CLK2 4 SDRAM+3.3pF 4 SDRAM+3.3pF
CLK3 Termination
Termination
Block Diagram for 2M x 64/72 SDRAM DIMM modules (HYS64/72V2200GU)
Semiconductor Group
4
4페이지 HYS64(72)V2200/4220GU-8/-10
SDRAM-Modules
Standby and Refresh Currents (Ta = 0 to 70oC, VCC = 3.3V ± 0.3V) 1)
Parameter
Symbol
Test Condition
X64 X72
Note
max.
Operating Current
Icc1
Burst length = 4, CL=3
trc>=trc(min.),
tck>=tck(min.), Io=0 mA
2 bank interleave operation
800 900 mA 1,2
Precharged Standby Icc2P CKE<=VIL(max), tck>=tck(min.) 24 27 mA
Current in Power
Down Mode
Icc2PS CKE<=VIL(max), tck=infinite
16 18 mA
Precharged Standby
Current in Non-
power
Down Mode
Icc2N
Icc2NS
CKE>=VIH(min), tck>=tck (min.),
input changed once in 3 cycles
CKE>=VIH(min), tck=infinite,
no input change
160
80
180 mA CS=
High
90 mA
Active Standby
Current in Power
Down Mode
Icc3P CKE<=VIL(max), tck>=tck(min.) 24 27 mA
Icc3PS CKE<=VIL(max), tck=infinite
16 18 mA
Active Standby
Current in Non-
power Down Mode
Icc3N CKE>=VIH(min), tck>=tck (min.) 200 225 mA CS=
input changed one time
High
Icc3NS CKE=>VIH(min),tck=infinite,
no input change
120 135 mA
Burst Operating
Current
Icc4 Burst length = full page,
trc = infinite, CL = 3,
tck>=tck (min.), Io = 0 mA
2 banks activated
Auto (CBR) Refresh
Current
Icc5 trc>=trc(min)
Self Refresh Current Icc6 CKE=<0,2V
760 855 mA 1,2
720 810 mA 1,2
16 18 mA 1,2
Semiconductor Group
7
7페이지 | |||
구 성 | 총 17 페이지수 | ||
다운로드 | [ HYS72V4220GU-8-3.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HYS72V4220GU-8-3 | 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module | Siemens |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |