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EL2001ACN 데이터시트 PDF




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부품번호 EL2001ACN 기능
기능 Low Power/ 70 MHz Buffer Amplifier
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EL2001ACN 데이터시트, 핀배열, 회로
EL2001C
Low Power 70 MHz Buffer Amplifier
Features
 1 3 mA supply current
 70 MHz bandwidth
 2000 V ms slew rate
 Low bias current 1 mA typical
 100 mA output current
 Short circuit protected
 Low cost
 Stable with capacitive loads
 Wide supply range g5V to g15V
 No thermal runaway
Applications
 Op amp output current booster
 Cable line driver
 A D input buffer
 Low standby current systems
Ordering Information
Part No
EL2001ACN
EL2001CM
EL2001CN
Temp Range
Pkg
Outline
0 C to a75 C P-DIP
MDP0031
0 C to a75 C 20-Lead SOL MDP0027
0 C to a75 C P-DIP
MDP0031
General Description
The EL2001 is a low cost monolithic high slew rate buffer
amplifier Built using the Elantec monolithic Complementary
Bipolar process this patented buffer has a b3 dB bandwidth of
70 MHz and delivers 100 mA yet draws only 1 3 mA of supply
current It typically operates from g15V power supplies but
will work with as little as g5V
This high speed buffer may be used in a wide variety of applica-
tions in military video and medical systems A typical example
is a general purpose op amp output current booster where the
buffer must have sufficiently high bandwidth and low phase
shift at the maximum frequency of the op amp
Elantec’s products and facilities comply with MIL-I-45208A
and other applicable quality specifications For information on
Elantec’s processing see the Elantec document QRA-1 Elan-
tec’s Processing Monolithic Integrated Circuits
Connection Diagrams
EL2001 DIP Pinout
EL2001 SOL Pinout
2001 – 1
Top View
2001 – 2
Top View
Note Non-designated pins are no connects and are not electrically connected
internally
Manufactured under U S Patent No 4 833 424 4 827 223 U K Patent No
2217134
Note All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication however this data sheet cannot be a ‘‘controlled document’’ Current revisions if any to these
specifications are maintained at the factory and are available upon your request We recommend checking the revision level before finalization of your design documentation
1989 Elantec Inc




EL2001ACN pdf, 반도체, 판매, 대치품
EL2001C
Low Power 70 MHz Buffer Amplifier
Typical Performance Curves
Offset Voltage
vs Temperature
Voltage Gain
vs Temperature
Output Voltage Swing
vs Temperature
Supply Current
vs Supply Voltage
Voltage Gain
vs Input Voltage
Voltage Gain
vs Source Resistance
Input Bias Current
vs Input Voltage
gSlew Rate
vs Supply Voltage
gSlew Rate
vs Capacitive Load
2001 – 4
4

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EL2001ACN 전자부품, 판매, 대치품
EL2001C
Low Power 70 MHz Buffer Amplifier
Burn-In Circuit
Simplified Schematic
2001 – 9
2001 – 10
Application Information
The EL2001 is a monolithic buffer amplifier built
on Elantec’s proprietary dielectric isolation pro-
cess that produces NPN and PNP transistors
with essentially identical DC and AC characteris-
tics The EL2001 takes full advantage of the com-
plementary process with a unique circuit topolo-
gy
Elantec has applied for two patents based on the
EL2001’s topology The patents relate to the base
drive and feedback mechanism in the buffer This
feedback makes 2000 V ms slew rates with 100X
loads possible with very low supply current
Power Supplies
The EL2001 may be operated with single or split
supplies with total voltage difference between
10V (g5V) and 36V (g18V) It is not necessary
to use equal split value supplies For example
b5V and a12V would be excellent for signals
from b2V to a9V
Bypass capacitors from each supply pin to
ground are highly recommended to reduce supply
ringing and the interference it can cause At a
minimum 1 mF tantalum capacitor with short
leads should be used for both supplies
Input Characteristics
The input to the EL2001 looks like a resistance in
parallel with about 3 5 picofarads in addition to a
DC bias current The DC bias current is due to
the miss-match in beta and collector current be-
tween the NPN and PNP transistors connected
to the input pin The bias current can be either
positive or negative The change in input current
with input voltage (RIN) is affected by the out-
put load beta and the internal boost RIN can
actually appear negative over portions of the in-
put range typical input current curves are shown
in the characteristic curves Internal clamp di-
odes from the input to the output are provided
These diodes protect the transistor base emitter
junctions and limit the boost current during slew
to avoid saturation of internal transistors The
diodes begin conduction at about g2 5V input to
output differential When that happens the input
resistance drops dramatically The diodes are rat-
ed at 50 mA When conducting they have a series
resistance of about 20X There is also 100X in
series with the input that limits input current
Above g7 5V differential input to output addi-
tional series resistance should be added
Source Impedance
The EL2001 has good input to output isolation
When the buffer is not used in a feedback loop
capactive and resistive sources up to 1 Meg pres-
ent no oscillation problems Care must be used in
board layout to minimize output to input cou-
pling CAUTION When using high source im-
pedances (RS l 100 kX) significant gain errors
can be observed due to output offset load resis-
tor and the action of the boost circuit See typi-
cal performance curves
7

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부품번호상세설명 및 기능제조사
EL2001ACN

Low Power/ 70 MHz Buffer Amplifier

Elantec
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