Datasheet.kr   

EL2004CG 데이터시트 PDF




Elantec에서 제조한 전자 부품 EL2004CG은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 EL2004CG 자료 제공

부품번호 EL2004CG 기능
기능 350 MHz FET Buffer
제조업체 Elantec
로고 Elantec 로고


EL2004CG 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 16 페이지수

미리보기를 사용할 수 없습니다

EL2004CG 데이터시트, 핀배열, 회로
EL2004 EL2004C
350 MHz FET Buffer
Features
 Slew rate 2500 V ms
 Rise time 1 ns
 Bandwidth 350 MHz
 ELH0033 pin compatible
 g5 to g15V operation
 100 mA output current
 MIL-STD-883B Rev C devices
manufactured in U S A
Applications
 Coaxial cable driver
 Fast op amp booster
 Flash converter driver
 Video line driver
 High-speed sample and hold
 Pulse transformer driver
 A T E pin driver
Ordering Information
Part No Temp Range Package Outline
EL2004CG b25 C to a85 C TO-8 MDP0002
EL2004G
b55 C to a125 C TO-8 MDP0002
EL2004L
b55 C to a125 C 52-Pad LCC MDP0013
EL2004L MIL b55 C to a125 C 52-Pad LCC MDP0013
5962-89659 is the SMD version of this device
Connection Diagram
Case is Electrically Isolated
General Description
The EL2004 is a very high-speed FET input buffer line driver
designed for unity gain applications at both high current (up to
100 mA) and at frequencies up to 350 MHz The 2500 V ms slew
rate and wide bandwidth ensures the stability of the circuit
when the EL2004 is used inside op amp feedback loops
Applications for the EL2004 include line drivers video buffers
wideband instrumentation and high-speed drivers for inductive
and capacitive loads The performance of the EL2004 makes it
an ideal buffer for video applications including input buffers for
flash A D converters and output buffers for video DACs Its
excellent phase linearity is particularly advantageous in digital
signal processing applications
Elantec facilities comply with MIL-I-45208A and are MIL-
STD-1772 certified Elantec’s Military devices comply with
MIL-STD-883B Revision C and are manufactured in our rigidly
controlled ultra-clean facilities in Milpitas California For ad-
ditional information on Elantec’s Quality and Reliability Assur-
ance Policy and procedures request brochure QRA-1
Simplified Schematic
Top View
2004 – 1
2004 – 3
Note All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication however this data sheet cannot be a ‘‘controlled document’’ Current revisions if any to these
specifications are maintained at the factory and are available upon your request We recommend checking the revision level before finalization of your design documentation Patent pending
1989 Elantec Inc




EL2004CG pdf, 반도체, 판매, 대치품
EL2004 EL2004C
350 MHz FET Buffer
g15V AC Electrical Characteristics
VS e g15V RL e 1 kX RS e 50X TJ e 25 C unless otherwise specified Contd
Parameter
Description
Test Conditions
EL2004
EL2004C
Min
Typ
Max
Test
Level
Min
Typ
Max
Test
Level
Units
SR Slew Rate
VIN e g5V (Note 5)
CL e 100 pF VIN e g5V
(Note 5)
2000 2500
1200
I 2000 2500
V 1200
I V ms
V V ms
tr Rise Time
DVIN P 0 6V
10 17 I
10 17 I
ns
Note See Test Figure DVIN P 0 6V RL e 50X
17 25 I
17 25 I
ns
tp
Propagation Delay
Note See Test Figure
DVIN P 0 6V
10 20 I
10 20 I
ns
ROUT
Output
f e 1 MHz VIN e 1 VRMS
4
V
4
VX
Impedance
DRL e 100X to Infinity
aPSRR
Power Supply
Rejection Ratio
DVSa e g1 5 Vpeak
f e 1 kHz
40 V 40 V dB
bPSRR
Power Supply
Rejection Ratio
DVSb e g1 5 Vpeak
f e 1 kHz
40 V 40 V dB
g5V AC Electrical Characteristics
VS e g5V RL e 50X RS e 50X TJ e 25 C unless otherwise specified
Parameter
Description
Test Conditions
EL2004
EL2004C
Min Typ Max Test Min Typ Max Test Units
Level
Level
BW Bandwidth
RL e 1 kX
(Note 4)
175 220
125 150
I 175 220
IV 125 150
I MHz
IV MHz
ts Settling Time to 1% DVIN e 1V tr e 3 ns
8 V 8 V ns
Cin Input Capacitance
3 V 3 V pF
SR Slew Rate
VIN e g2V (Note 6)
900 1200
I 900 1200
I V ms
CL e 100 pF VIN e g2V
500
V
500
V V ms
RL e 1 kX (Note 6)
tr Rise Time
RL e 1 kX DVIN P 0 6V
16 20 I
16 20 I
ns
Note See Test Figure RL e 50X DVIN P 0 6V
2 3 2 8 IV
2 3 2 8 IV ns
tp
Propagation Delay RL e 1 kX DVIN P 0 6V
12 24 I
12 24 I
ns
Note See Test Figure
ROUT
Output
f e 1 MHz VIN e 1 VRMS
4
V
4
VX
Impedance
DRL e 100X to Infinity
aPSRR
Power Supply
Rejection Ratio
DVSb e g0 5 Vpeak
f e 1 kHz
30 V 30 V dB
bPSRR
Power Supply
Rejection Ratio
DVSa e g0 5 Vpeak
f e 1 kHz
30 V 30 V dB
4

4페이지










EL2004CG 전자부품, 판매, 대치품
EL2004 EL2004C
350 MHz FET Buffer
Applications Information
The EL2004 is one member of a family of high
performance buffers manufactured by Elantec
The 2004 is optimized for speed while others offer
choices of input DC parameters or output drive
or cost The following table illustrates those
members available at the time of this printing
Consult the factory for the latest capabilities in
this developing line
Elantec’s Buffer Family
Part
Slew
Input Peak Rise
Bandwidth
Rate
V ms
MHz
Current IOUT Time
(Warm) mA ns
ELH0002
ELH0033
EL2004
EL2005
200
1500
2500
1500
50
100
350
140
6 mA 400 7
2 5 nA 250 2 9
2 5 nA 250 1 0
0 1 nA 250 2 5
Input Bias Current vs
Temperature
Input Bias Current vs
Input Voltage
Recommended Layout Precautions
The very high-speed performance of the EL2004
can only be realized by taking certain precau-
tions in circuit layout and power supply decou-
pling Low inductance ceramic chip or disc power
supply decoupling capacitors of 0 1 mF or more
should be connected with the shortest practical
lead lengths between the device supply leads and
a ground plane In addition it can be helpful to
parallel these with 4 7 mF electrolytics (Tanta-
lum preferred) Failure to follow these precau-
tions can result in oscillation
Circuit Operation
The EL2004 is effectively an ideal unity gain am-
plifier with almost infinite input impedance and
about 6X output impedance
Input Characteristics
The input impedance of a junction FET is a
strong function of temperature and input volt-
age Nominal input resistance of EL2004 is 1012
at 25 C junction but as IB doubles every 11 C in
the JFET the input resistance falls During
warm-up self-heating raises the junction temper-
ature up to 60 C or more (without heatsink) so
operating IB will be much higher than the data
sheet 25 C specification
Another factor which can increase bias current is
input voltage If the input voltage is more than
20V below the positive supply the input current
rises exponentially (See Curve )
2004 – 9
In applications such as sample and hold circuits
where it is important to maintain low input bias
current over input voltage range the EL2005
High Accuracy Fast Buffer is recommended
The input capacitance of EL2004 comprises the
FET device gate-to-source capacitance (which is
a function of input voltage) and stray capaci-
tance to the case Effective input capacitance can
be minimized by connecting the case to the out-
put since it is electrically isolated Or for reduced
radiation the case may be grounded The AC
characteristics specified in this data sheet were
obtained with the case floating
Offset Voltage Adjustment
The EL2004’s offset voltages have been actively
laser trimmed at g15V supplies to meet specified
limits when the offset adjust pin is shorted to the
offset preset pin If external offset null is re-
quired the offset adjust pin should be connected
to a 200X trim pot connected to the negative sup-
ply
7

7페이지


구       성 총 16 페이지수
다운로드[ EL2004CG.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
EL2004CG

350 MHz FET Buffer

Elantec
Elantec

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵