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EL2008CT 데이터시트 PDF




Elantec에서 제조한 전자 부품 EL2008CT은 전자 산업 및 응용 분야에서
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부품번호 EL2008CT 기능
기능 55 MHz 1 Amp Buffer Amplifier
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EL2008CT 데이터시트, 핀배열, 회로
EL2008C
55 MHz 1 Amp Buffer Amplifier
Features
• High slew rate 2500 V/µs
• Wide bandwidth 100MHz @ RL =
50and 55MHz @ RL = 10
• Output current 1A continuous
• Output impedance 1
• Quiescent current 13mA
• Short circuit protected
• Power package with isolated metal
tab
Applications
• Video distribution amplifier
• Fast op amp booster
• Flash converter driver
• Motor driver
• Pulse transformer driver
• A.T.E. pin driver
Ordering Information
Part No.
EL2008CT
Temp. Range
0°C to +75°C
Package
TO-220
Outline#
MDP0028
Connection Diagrams
General Description
The EL2008C is a patented high speed bipolar monolithic buffer
amplifier designed to provide currents over 1 amp at high frequencies,
while drawing only 13 mA of quiescent supply current. The
EL2008C's 1500 V/µs slew rate and 55 MHz bandwidth driving a 10
load is second only to the EL2009 and insures stability in fast op amp
feedback loops. Elantec has applied for patents on unique circuitry
within the EL2008C.
Used as an open loop buffer, the EL2008C's low output impedance
(1) gives a gain of 0.99 when driving a 100load and 0.9 driving a
10load. The EL2008C has output short circuit current limiting
which will protect the device under both a DC fault condition and AC
operation with reactive loads.
The EL2008C is constructed using Elantec's proprietary Complemen-
tary Bipolar process that produces PNP and NPN transistors with
essentially identical AC and DC characteristics. In the EL2008C, the
Complementary Bipolar process also insulates the package's metal
heat sink tab from all supply voltages. Therefore the tab may be
mounted to an external heat sink or the chassis without an insulator.
The EL2008CT is specified for operation over the 0°C to +75°C tem-
perature range and is provided in a 5-lead TO-220 plastic power
package.
Simplified Schematic
5-Pin TO-220
Top View
Manufactured under U.S. Patent No. 4,833,424 and 4,827,223 and U.K. Patent No. 2217134.
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
© 2001 Elantec Semiconductor, Inc.




EL2008CT pdf, 반도체, 판매, 대치품
EL2008C
55 MHz 1 Amp Buffer Amplifier
Typical Performance Curves
Slew Rate
vs Capacitance Load
Slew Rate
vs Supply Voltage
Rise Time
vs Temperature
Output Impedance
vs Frequency
Output Resistance
vs Supply Voltage
Small Signal Output
Resistance
vs DC Output Current
-3 dB Bandwidth
vs Supply Voltage
Quiescent Supply Current
vs Supply Voltage
Input Current
vs Input Voltage
4

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EL2008CT 전자부품, 판매, 대치품
EL2008C
55 MHz 1 Amp Buffer Amplifier
they have a series resistance of about 20. If the output
of the EL2008C is accidentally shorted it is possible that
some devices driving the EL2008C's input could be
damaged or destroyed driving the EL2008C's load
through the diodes while the EL2008C is unaffected. In
such cases a resistor in series with the input of the
EL2008C can limit the current.
Source Impedance
The EL2008C has good input to output isolation. Open
loop, capacitive and resistive sources up to 100 k
present no oscillation problem driving resistive loads as
long as care is used in board layout to minimize output
to input coupling and the supplies are properly bypassed.
When driving capacitive loads in the 100 pF to 1000 pF
region source resistances above 25can cause peaking
and oscillation. Such problems can be eliminated by
placing a capacitor from the EL2008C's input to ground.
The value should be about 1/4 the load capacitance. In a
feedback loop there is a speed penalty and a possibility
of oscillation when the EL2008C is driven with a source
impedance of 200or more. Significant phase shift can
occur due to the EL2008C's 25 pF input capacitance.
Inductive sources can cause oscillations. A series resis-
tor of a few hundred ohms to 1 kwill usually solve the
problem.
Current Limit
The EL2008C has internal current limiting to protect the
output transistors. The current limit is about 1.5A at
room temperature and decreases with junction tempera-
ture. At 150°C junction temperature it is above 1A.
Heat Sinking
A suitable heat sink will be required for most applica-
tions. The thermal resistance junction to case for the TO-
220 package is 4°C per watt. No voltage appears at the
heat sink tab so no precautions need to be taken to avoid
shorting the tab to a supply voltage or ground. As there
is a small parasitic capacitance between the tab and the
buffer circuitry, it is recommended that the tab be con-
nected to AC ground (either supply voltage or DC
ground). The center lead is internally connected to the
tab so the connection can be made at the tab or the center
lead.
Parallel Operation
If more than 1A is required or if heat management is a
problem, several EL2008Cs may be paralleled together.
The result is as through each device was driving only
part of the load. For example, if two units are paralleled
then a 5load looks like 10to each EL2008C. Of
course, parallel operation reduces both the input and out-
put impedance and increases bias current. But there is no
increase in offset voltage. Three units in parallel can
drive a 3load ±10V at 2500 V/µs. The output imped-
ance will be about 0.33.
Resistive Loads
The DC gain of the EL2008C is the product of the
unloaded gain (0.999) and the voltage divider formed by
the device output resistance and the load resistance.
AV = 0.999* (RL/RL + ROUT)
The high frequency response varies with the load resis-
tance as shown by the characteristic curves. Both gain
and phase are shown. If the 80 MHz peaking is undesir-
able when driving load resistors greater than 50, an RC
snubber circuit can be used from output to ground. The
capacitive load section discusses snubber usage in more
detail.
Capacitive Loads
The EL2008C is not stable driving purely capacitive
loads between 100 pF and 500 pF. Purely capacitive
loads from 500 pF to 1000 pF will also have excessive
peaking as shown in the characteristic curves. The
squarewave response will have large overshoots and
ring for hundreds of nanoseconds.
When driving capacitive loads, stability can be achieved
and peaking and ringing can be minimized either by add-
ing a 50(or less) load in parallel with the capacitive
load or by an RC snubber circuit from output to ground.
The snubber values can be found empirically by observ-
ing a squarewave or the frequency response. First just
put a resistor alone from the output to ground until the
desired response is achieved. The gain will be reduced
due to the output resistance of the EL2008C and power
consumption will be high. Then put a capacitor in series
with the resistor to restore gain at low frequencies and
eliminate the DC current. Start with a small capacitor
and increase until the response is optimum. The figure
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