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PDF M48Z58Y Data sheet ( Hoja de datos )
| Número de pieza | M48Z58Y | |
| Descripción | 64 Kbit (8 Kbit x 8) ZEROPOWER SRAM | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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M48Z58
M48Z58Y
5 V, 64 Kbit (8 Kbit x 8) ZEROPOWER® SRAM
Features
■ Integrated, ultra low power SRAM, power-fail
control circuit, and battery
■ READ cycle time equals WRITE cycle time
■ Automatic power-fail chip deselect and WRITE
protection
■ WRITE protect voltages:
(VPFD = power-fail deselect voltage)
– M48Z58: VCC = 4.75 to 5.5 V;
4.5 V ≤ VPFD ≤ 4.75 V
– M48Z58Y: VCC = 4.5 to 5.5 V;
4.2 V ≤ VPFD ≤ 4.5 V
■ Self-contained battery in the CAPHAT™ DIP
package
■ Packaging includes a 28-lead SOIC and
SNAPHAT® top (to be ordered separately)
■ SOIC package provides direct connection for a
SNAPHAT® top which contains the battery
■ Pin and function compatible with JEDEC
standard 8 Kbit x 8 SRAMs
■ RoHS compliant
– Lead-free second level interconnect
28
1
PCDIP28
battery CAPHAT™
SNAPHAT®
battery
28
1
SOH28
June 2011
Doc ID 2559 Rev 11
1/24
www.st.com
1
1 page  
M48Z58, M48Z58Y
1 Description
Description
The M48Z58/Y ZEROPOWER® RAM is an 8 Kbit x 8 non-volatile static RAM that integrates
power-fail deselect circuitry and battery control logic on a single die. The monolithic chip is
available in two special packages to provide a highly integrated battery-backed memory
solution.
The M48Z58/Y is a non-volatile pin and function equivalent to any JEDEC standard 8 K x 8
SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the
non-volatility of PROMs without any requirement for special WRITE timing or limitations on
the number of WRITEs that can be performed.
The 28-pin, 600 mil DIP CAPHAT™ houses the M48Z58/Y silicon with a long life lithium
button cell in a single package.
The 28-pin, 330 mil SOIC provides sockets with gold plated contacts at both ends for direct
connection to a separate SNAPHAT® housing containing the battery. The unique design
allows the SNAPHAT battery package to be mounted on top of the SOIC package after the
completion of the surface mount process. Insertion of the SNAPHAT housing after reflow
prevents potential battery damage due to the high temperatures required for device surface-
mounting. The SNAPHAT housing is keyed to prevent reverse insertion.
The SOIC and battery packages are shipped separately in plastic anti-static tubes or in tape
& reel form.
For the 28-lead SOIC, the battery package (e.g., SNAPHAT) part number is “M4Z28-
BR00SH1”.
Figure 1. Logic diagram
VCC
13
A0-A12
8
DQ0-DQ7
W M48Z58
M48Z58Y
E
G
VSS
AI01176B
Doc ID 2559 Rev 11
5/24
5 Page 
M48Z58, M48Z58Y
Operating modes
Table 4. WRITE mode AC characteristics
Symbol
Parameter(1)
M48Z58/Y
Min Max
Unit
tAVAV
tAVWL
tAVEL
tWLWH
tELEH
tWHAX
tEHAX
tDVWH
tDVEH
tWHDX
tEHDX
tWLQZ(2)(3)
tAVWH
tAVEH
tWHQX(2)(3)
WRITE cycle time
Address valid to WRITE enable low
Address valid to chip enable low
WRITE enable pulse width
Chip enable low to chip enable high
WRITE enable high to address transition
Chip enable high to address transition
Input valid to WRITE enable high
Input valid to chip enable high
WRITE enable high to input transition
Chip enable high to input transition
WRITE enable low to output Hi-Z
Address valid to WRITE enable high
Address valid to chip enable high
WRITE enable high to output transition
70 ns
0 ns
0 ns
50 ns
55 ns
0 ns
0 ns
30 ns
30 ns
5 ns
5 ns
25 ns
60 ns
60 ns
5 ns
1. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where
noted).
2. CL = 5 pF (see Figure 9 on page 14).
3. If E goes low simultaneously with W going low, the outputs remain in the high impedance state.
2.3
Note:
Data retention mode
With valid VCC applied, the M48Z58/Y operates as a conventional BYTEWIDE™ static
RAM. Should the supply voltage decay, the RAM will automatically power-fail deselect, write
protecting itself when VCC falls within the VPFD (max), VPFD (min) window. All outputs
become high impedance, and all inputs are treated as “Don't care.”
A power failure during a WRITE cycle may corrupt data at the currently addressed location,
but does not jeopardize the rest of the RAM's content. At voltages below VPFD (min), the
user can be assured the memory will be in a write protected state, provided the VCC fall time
is not less than tF. The M48Z58/Y may respond to transient noise spikes on VCC that reach
into the deselect window during the time the device is sampling VCC. Therefore, decoupling
of the power supply lines is recommended.
When VCC drops below VSO, the control circuit switches power to the internal battery which
preserves data. The internal button cell will maintain data in the M48Z58/Y for an
accumulated period of at least 10 years when VCC is less than VSO.
As system power returns and VCC rises above VSO, the battery is disconnected, and the
power supply is switched to external VCC. Normal RAM operation can resume trec after VCC
exceeds VPFD (max).
For more information on battery storage life refer to the application note AN1012.
Doc ID 2559 Rev 11
11/24
11 Page | ||
| Páginas | Total 24 Páginas | |
| PDF Descargar | [ Datasheet M48Z58Y.PDF ] | |
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