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부품번호 | PD54003S 기능 |
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기능 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 10 페이지수
PD54003 - PD54003S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD5400 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 7V in common source mode at frequencies of
up to 1GHz. PD54003 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD54003’s su-
perior linearity performance makes it an ideal so-
lution for portable radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
PD54003
XPD54003
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD54003S
XPD54003S
ABSOLUTE MAXIMUM RATINGS(TCASE = 25 OC)
Symbol
Parameter
V(BR)DSS Drain Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70 0C)
Tj Max. Operating Junction Temperature
TSTG Storage Temperature
THERMAL DATA
Rth(j-c) Junction-Case Thermal Resistance
May 2000
Value
25
±20
4
52.8
165
-65 to 165
1.8
Unit
V
V
A
W
0C
0C
0C/W
1/10
PD54003 - PD54003S
TYPICAL PERFORMANCE
Output Power vs. Input Power
PD54003 Power Gain vs. Output Power
5
4 480MHz
520MHz
3
500MHz
2
1 Vdd=7.5V
Idq=50 mA
0
0 0.1 0.2 0.3
Pin, INPUT POWER (W)
Drain Efficiency vs. Output Power
0.4
16
480MHz
14
500MHz
12
520MHz
10
8
Vdd=7.5V
Idq= 50 mA
6
0 123
Pout, OUTPUT POWER (W)
Return Loss vs. Output Power
4
80
70 480MHz
520MHz
60
50 500MHz
40
30
Vdd=7.5V
20 Idq=50mA
10
0
123
Pout, OUTPUT POWER (W)
4
Output Power vs. Bias Current
0
-10
480MHz
-20
-30 Vdd=7.5 V
Idq=50mA
520MHz
500MHz
-40
0
123
Pout, OUTPUT POWER (W)
Drain Efficiency vs. Bias Current
4
3.8
3.7
3.6
3.5
3.4
3.3
3.2
3.1
3
2.9
0
500MHz
520MHz
480MHz
Pin=23.3dBm
Vdd=7.5V
100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
4/10
70
480MHz
60
500MHz
50
520MHz
40
30
20
Pin=23.3 dBm
Vdd=7.5V
10
0
100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
4페이지 TEST CIRCUIT SCHEMATIC
PD54003 - PD54003S
TEST CIRCUIT COMPONENT PART LIST
B1,B2
SHORT FERRITE BEAD, FAIR RITE
PRODUCTS (2743021446)
C1,C13
240pF, 100 mil CHIP CAPACITOR
C2,C3,C4,C10,
C11,C12
0 TO 20pF TRIMMER CAPACITOR
C5 130pF, 100 mil CHIP CAP
C6,C17
120pF, 100 mil CHIP CAP
C7,C14
10µF, 50V ELECTROLYTIC
CAPACITOR
C8,C15
1,200pF, 100 mil CHIP CAPACITOR
C9,C16
0.1 F, 100 mil CHIP CAPACITOR
L1 55.5 Nh, 5 TURN, COILCRAFT
N1,N2
TYPE N FLANGE MOUNT
R1 15 Ω, 0805 CHIP RESISTOR
R2 1,0 KΩ, 1/8 W RESISTOR
R3
R4
Z1
Z2
Z3
Z4
Z5
Z6,Z7
Z8
Z9
Z10
Z11
BOARD
15 Ω, 0805 CHIP RESISTOR
33 KΩ, 1/8 W RESISTOR
0.175” X 0.080” MICROSTRIP
1.049” X 0.080” MICROSTRIP
0.289” X 0.080” MICROSTRIP
0.026” X 0.080” MICROSTRIP
0.192” X 0.223” MICROSTRIP
0.260” X 0.223” MICROSTRIP
0.064” X 0.080” MICROSTRIP
0.334” X 0.080” MICROSTRIP
0.985” X 0.080” MICROSTRIP
0.472” X 0.080” MICROSTRIP
ROGER, ULTRA LAM 2000
εTHK 0.030”, r = 2.55
2oz. ED Cu 2 SIDES.
7/10
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다운로드 | [ PD54003S.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
PD54003 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY | STMicroelectronics |
PD54003-E | RF POWER transistor | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |