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부품번호 | PD55015-PD55015S 기능 |
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기능 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY | ||
제조업체 | STMicroelectronics | ||
로고 | |||
PD55015 - PD55015S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 15 W with 13.5 dB gain @ 500 MHz /
12.5V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55015 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12V in common source mode at frequencies of
up to 1GHz. PD55015 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD55015’s su-
perior linearity performance makes it an ideal so-
lution for car mobile radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
ABSOLUTE MAXIMUM RATINGS(TCASE = 25 OC)
Symbol
Parameter
V(BR)DSS Drain Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70 0C)
Tj Max. Operating Junction Temperature
TSTG Storage Temperature
THERMAL DATA
Rth(j-c) Junction-Case Thermal Resistance
May 2000
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
PD55015
XPD55015
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD55015S
XPD55015S
Value
40
±20
5
73
165
-65 to 165
1.3
Unit
V
V
A
W
0C
0C
0C/W
1/10
PD55015 - PD55015S
TYPICAL PERFORMANCE
Output Power vs. Input Power
PD55015
18
16
14
12
10
8
6
4
2
0
0
480MHz
520MHz
500MHz
VDD= 12.5V
IDQ= 150mA
0.2 0.4 0.6 0.8 1 1.2 1.4
Pin, INPUT POWER (W)
Drain Efficiency vs. Output Power
70
480MHz
60
50 500MHz
40
520MHz
30
20
VDD= 12.5V
10 IDQ=150mA
0
0 2 4 6 8 10 12 14 16 18
Pout, OUTPUT POWER (W)
Power Gain vs. Output Power
18
16
480MHz
14 500MHz
520MHz
12
10
VDD =12.5V
IDQ =150mA
8
0 2 4 6 8 10 12 14 16 18
Pout, OUTPUT POWER (W)
Return Loss vs. Output Power
0
480MHz
-10
500MHz
-20
520MHz
-30
VDD =12.5V
IDQ =150mA
-40
0 2 4 6 8 10 12 14 16 18
Pout, OUTPUT POWER (W)
Output Power vs. Bias Current
Drain Efficiency vs. Bias Current
20
18
16
14
12
10
8
0
480MHz
500MHz
520MHz
VDD = 12.5V
Pin=0.8W
200 400 600 800
Idq, BIAS CURRENT (mA)
1000
70
500MHz
60
480MHz
50 520MHz
40
30
0
VDD =12.5V
Pin=0.8W
200 400 600 800
Idq, BIAS CURRENT (mA)
1000
4/10
4페이지 TEST CIRCUIT SCHEMATIC
PD55015 - PD55015S
TEST CIRCUIT COMPONENT PART LIST
B1,B2
FERRITE BEAD
C1,C12
300pF, 100 mil CHIP CAPACITOR
C2,C3,C4,C11,
C12,C13
1 TO 20 pF TRIMMER CAPACITOR
C6,C18
pF 100 mil CHIP CAP
C9,C15
10µF, 50V ELECTROLYTIC
CAPACITOR
C8,C16
0.1mF, 100 mil CHIP CAP
C7,C17
1,000pF 100 mil CHIP CAP
C5, C10
33pF, 100 mil CHIP CAP
L1 56nH, 7 TURN, COILCRAFT
N1,N2
TYPE N FLANGE MOUNT
R1 15 Ω, 1W CHIP RESISTOR
R2
R3
Z1
Z2
Z3
Z4,Z5
Z6
Z7
Z8
Z9
BOARD
1 kΩ, 1W CHIP RESISTOR
33 kΩ, 1W CHIP RESISTOR
0.471” X 0.080” MICROSTRIP
1.082” X 0.080” MICROSTRIP
0.372” X 0.080” MICROSTRIP
0.260” X 0.223” MICROSTRIP
0.050” X 0.080” MICROSTRIP
0.551” X 0.080” MICROSTRIP
0.825” X 0.080” MICROSTRIP
0.489” X 0.080” MICROSTRIP
ROGER, ULTRA LAM 2000
εTHK 0.030” r = 2.55
2oz ED Cu 2 SIDES
7/10
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ PD55015-PD55015S.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
PD55015-PD55015S | RF POWER TRANSISTORS The LdmoST Plastic FAMILY | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |