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Número de pieza | PD55025S | |
Descripción | RF POWER TRANSISTORS The LdmoST Plastic FAMILY | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
PD55025
PD55025S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 25 W with 14.5 dB gain @ 500 MHz /
12.5 V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55025 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55025 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. PD55025’s
superior linearity performance makes it an ideal
solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70°C)
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance
PowerSO-10RF
(formed lead)
ORDER CODE
PD55025
BRANDING
PD55025
PowerSO-10RF
(straight lead)
ORDER CODE
PD55025S
BRANDING
PD55025S
Value
40
± 20
7
79
165
-65 to +150
1.2
Unit
V
V
A
W
°C
°C
°C/W
March, 21 2003
1/13
1 page TYPICAL PERFORMANCE (PD55025S)
Output Power vs Gate-Source Voltage
30
25
20
480 MHz
15
500 MHz
520 MHz
10
5
Vdd = 12.5 V
Pin = 0.85 W
0
01 234
Vgs (V)
Power Gain vs Output Power (f = 175 MHz)
PD55025 - PD55025S
Output Power vs Input Power (f = 175 MHz)
45
40
35
30
25
20
15
10
5 Vdd = 12.5 V
Idq = 200 m A
0
0 0.5 1 1.5 2 2.5
Pin (W )
Drain Efficiency vs Output Power (f = 175 MHz)
30
25
20
15
10
Vdd = 12.5 V
5 Idq = 200 m A
0
0 10 20 30 40 50
Pout (W )
Input Return Loss vs Output Power (f = 175 MHz)
80
70
60
50
40
30
20
10
0
0
Vdd = 12.5 V
Idq = 200 m A
10 20 30 40 50
Pout (W )
0
-5
-10
-15
-20
-25
-30
0
Vdd = 12.5 V
Idq = 200 m A
10 20 30 40 50
Pout (W )
5/13
5 Page PD55025 - PD55025S
DIM.
A1
A2
A3
A4
a
b
c
D
D1
E
E1
E2
E3
F
G
R1
R2
T1
T2
PowerSO-10RF Straight Lead MECHANICAL DATA
mm Inch
MIN.
TYP.
MAX
MIN.
TYP.
1.62
1.67
1.72
0.064
0.065
3.4
3.5
3.6
0.134
0.137
1.2
1.3
1.4
0.046
0.05
0.15
0.2
0.25
0.005
0.007
0.2 0.007
5.4
5.53
5.65
0.212
0.217
0.23
0.27
0.32
0.008
0.01
9.4
9.5
9.6
0.370
0.374
7.4
7.5
7.6
0.290
0.295
15.15
15.4
15.65
0.595
0.606
9.3
9.4
9.5
0.365
0.37
7.3
7.4
7.5
0.286
0.292
5.9
6.1
6.3
0.231
0.24
0.5 0.019
1.2 0.047
0.25
0.8 0.031
6 deg
6 deg
10 deg
10 deg
Note (1): Resin protrusions not included (max value: 0.15 mm per side)
MAX
0.068
0.142
0.054
0.009
0.221
0.012
0.377
0.298
0.615
0.375
0.294
0.247
0.01
CRITICAL DIMENSIONS:
- Overall width (L)
11/13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet PD55025S.PDF ] |
Número de pieza | Descripción | Fabricantes |
PD55025 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY | STMicroelectronics |
PD55025S | RF POWER TRANSISTORS The LdmoST Plastic FAMILY | STMicroelectronics |
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