|
|
|
부품번호 | PD55035 기능 |
|
|
기능 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 14 페이지수
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
PD55035
PD55035S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 35 W with 16.9 dB gain @ 500 MHz /
12.5 V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55035 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55035 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. PD55035’s
superior linearity performance makes it an ideal
solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70°C)
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance
March, 21 2003
PowerSO-10RF
(formed lead)
ORDER CODE
PD55035
BRANDING
PD55035
PowerSO-10RF
(straight lead)
ORDER CODE
PD55035S
BRANDING
PD55035S
Value
40
± 20
7
95
165
-65 to +150
1.0
Unit
V
V
A
W
°C
°C
°C/W
1/14
PD55035 - PD55035S
TYPICAL PERFORMANCE (PD55035S)
Input Return Loss vs. Output Power
0
Vdd =12.5 V
Idq = 200 m A
-5
-10
-15
-20 520 MHz
500 MHz
-25 480 MHz
-30
0
10 20 30 40 50
Pout (W )
Efficiency vs. Bias Current
80
70
500 MHz
60 480, 520 MHz
50
40
30
Vdd = 12.5 V
20 P in = 0.72 W
10
0
200 400 600 800 1000
Idq (m A)
Efficiency vs. Supply Voltage
80
70
60
50
40
520 MHz
480 MHz
500 MHz
30
20
10
0
6
Idq = 200 m A
Pin = 0.72 W
8 10 12 14 16 18
Vdd (V)
4/14
Output Power vs. Bias Current
38
500 MHz
37
520 MHz
480 MHz
36
35
34
33
0
Vdd = 12.5 V
Pin = 0.72 W
200 400 600 800 1000
Idq (mA)
Output Power vs. Supply Voltage
60
50 520 MHz
40 480 MHz
500 MHz
30
20
10
0
6
Idq = 200 m A
Pin = 0.72 W
8 10 12 14 16 18
Vdd (V)
Output Power vs. Gate Voltage
45
40
35
30
25
20
15
10
5
0
0 0.5 1 1.5 2 2.5
Vgs (V)
520
500
480 MHz
Vdd = 12.5 V
Pin = 0.72 W
3 3.5 4
4페이지 175 MHz TEST CIRCUIT SCHEMATIC (ENGINEERING)
+VGG
RF
Input
PD55035 - PD55035S
+VDD
RF
Output
175 MHz TEST CIRCUIT COMPONENT PART LIST
C1,C6
C2,C5
C3, C4
COMPONENT
DESCRIPTION
10 µF ELECTROLYTIC CAPACITOR
0.1 µF CHIP CAPACITOR
0.01 µF CHIP CAPACITOR
C7, C8
1200 pF CHIP CAPACITOR
C9, C16
1000 pF CHIP CAPACITOR
C10 ARCO 406 TRIMMER CAPACITOR
C11 62 pF CHIP CAPACITOR
C12 15 pF CHIP CAPACITOR
C13 20 pF CHIP CAPACITOR
C14 75 pF CHIP CAPACITOR
C15 JOHANSON 1-20 pF TRIMMER CAPACITOR
R1 33 kΩ CHIP RESISTOR
R2 18 Ω CHIP RESISTOR
R3 27 Ω CHIP RESISTOR
R4 47 Ω CHIP RESISTOR
L1 5 TURN, 16 AWG MAGNETWIRE, ID = 0.25”, INDUCTOR
FB1, FB2
BOARD
FERRITE BEAD
εROGER, ULTRA LAM 2000 THK 0.030”, r = 2.55 2oz. ED Cu 2 SIDES.
7/14
7페이지 | |||
구 성 | 총 14 페이지수 | ||
다운로드 | [ PD55035.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
PD55035 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY | STMicroelectronics |
PD55035S | RF POWER TRANSISTORS The LdmoST Plastic FAMILY | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |