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부품번호 | M4Z28-BR00SH 기능 |
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기능 | ZEROPOWER SNAPHAT Battery | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 19 페이지수
M40SZ100Y
M40SZ100W
5V or 3V NVRAM SUPERVISOR FOR LPSRAM
FEATURES SUMMARY
s CONVERT LOW POWER SRAMs INTO
NVRAMs
s 5V OR 3V OPERATING VOLTAGE
s PRECISION POWER MONITORING and
POWER SWITCHING CIRCUITRY
s AUTOMATIC WRITE-PROTECTION WHEN
VCC IS OUT-OF-TOLERANCE
s CHOICE OF SUPPLY VOLTAGES and
POWER-FAIL DESELECT VOLTAGES:
– M40SZ100Y: VCC = 4.5 to 5.5V;
4.20V ≤ VPFD ≤ 4.50V
– M40SZ100W: VCC = 2.7 to 3.6V;
2.55V ≤ VPFD ≤ 2.70V
s RESET OUTPUT (RST) FOR POWER ON
RESET
s 1.25V REFERENCE (for PFI/PFO)
s LESS THAN 10ns CHIP ENABLE ACCESS
PROPAGATION DELAY (at 5V)
s OPTIONAL PACKAGING INCLUDES A 28-
LEAD SOIC and SNAPHAT® TOP (to be
ordered separately)
s 28-LEAD SOIC PACKAGE PROVIDES
DIRECT CONNECTION FOR A SNAPHAT
TOP WHICH CONTAINS THE BATTERY
s BATTERY LOW PIN (BL)
Figure 1. 16-pin SOIC Package
16
1
SO16 (MQ)
Figure 2. 28-pin SOIC Package*
SNAPHAT (SH)
Battery
28
1
SOH28 (MH)
* Contact Local Sales Office
September 2003
Rev. 1.3
1/19
M40SZ100Y, M40SZ100W
Figure 4. SOIC16 Connections
Figure 5. SOIC28 Connections
NC
NC
RST
NC
RSTIN
PFO
VBAT
VSS
1 16
2 15
3 14
4 M40SZ100Y 13
5 M40SZ100W 12
6 11
7 10
89
VCC
NC
VOUT
NC
PFI
BL
E
ECON
AI03935
BL
NC
NC
NC
NC
NC
NC
NC
RSTIN
NC
NC
NC
PFO
VSS
1 28
2 27
3 26
4 25
5 24
6 23
7 M40SZ100Y 22
8 M40SZ100W 21
9 20
10 19
11 18
12 17
13 16
14 15
AI03934
VCC
NC
NC
VOUT
NC
NC
PFI
NC
E
NC
RST
NC
NC
ECON
Note: 1. DU = Do Not Use
Figure 6. Block Diagram
VCC
VBAT
RSTIN
E
PFI
1.25V
Note: Open drain output
VBL= 2.5V COMPARE
VSO = 2.5V COMPARE
VPFD= 4.4V COMPARE
(2.65V for SZ100W)
POR
COMPARE
VOUT
BL (1)
RST(1)
ECON
PFO
AI04766
4/19
4페이지 M40SZ100Y, M40SZ100W
Table 5. DC Characteristics
Sym
Parameter
Test Condition(1)
M40SZ100Y
Min Typ
Max
M40SZ100W
Min Typ Max
Unit
ICC Supply Current
Outputs open
1
0.5 mA
ICCDR
Data Retention Mode
Current(2)
50 200
50 200 nA
ILI(3)
Input Leakage
Current
Input Leakage
Current (PFI)
0V ≤ VIN ≤ VCC
–25
2
±1
25 –25 2
±1 µA
25 nA
ILO(4)
Output Leakage
Current
0V ≤ VOUT ≤ VCC
±1
±1 µA
IOUT1(5)
VOUT Current
(Active)
VOUT > VCC – 0.3
175
100 mA
IOUT2
VOUT Current
(Battery Back-up)
VOUT > VBAT – 0.3
100
100 µA
VBAT Battery Voltage
2.5 3.0 3.5(6)
2.5 3.0 3.5(6)
V
VIH Input High Voltage
0.7VCC
VCC + 0.3 0.7VCC
VCC + 0.3 V
VIL Input Low Voltage
–0.3
0.3VCC –0.3
0.3VCC V
VOH
Output High
Voltage(7)
IOH = –1.0mA
2.4
2.4 V
VOHB
VOH Battery Back-
up(8)
IOUT2 = –1.0µA 2.5 2.9
3.5
2.5 2.9
3.5
V
Output Low Voltage
IOL = 3.0mA
0.4
0.4 V
VOL Output Low Voltage
(open drain)(9)
IOL = 10mA
0.4
0.4 V
VPFD
Power-fail Deselect
Voltage
4.20 4.40 4.50
2.55 2.60 2.70
V
VPFI
PFI Input Threshold
PFI Hysteresis
VCC = 5V(Y)
VCC = 3V(V)
PFI Rising
1.225 1.250 1.275
20 70
1.225 1.250 1.275
20 70
V
mV
VSO
Battery Back-up
Switchover Voltage
2.5 2.5 V
Note: 1. Valid for Ambient Operating Temperature: TA = –40 to 85°C; VCC = 2.7 to 3.6V or 4.5 to 5.5V(except where noted).
2. Measured with VOUT and ECON open.
3. RSTIN internally pulled-up to VCC through 100kΩ resistor.
4. Outputs deselected.
5. External SRAM must match SUPERVISOR chip VCC specification (3V or 5V).
6. For rechargeable back-up, VBAT (max) may be considered VCC – 0.5V.
7. For PFO pin (CMOS).
8. Chip Enable output (ECON) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage currents will re-
duce battery life.
9. For RST & BL pins (Open Drain).
7/19
7페이지 | |||
구 성 | 총 19 페이지수 | ||
다운로드 | [ M4Z28-BR00SH.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
M4Z28-BR00SH | 5V or 3V NVRAM SUPERVISOR FOR LPSRAM | ST Microelectronics |
M4Z28-BR00SH | ZEROPOWER SNAPHAT Battery | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |