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Datasheet H7N0307AB Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1H7N0307ABSilicon N Channel MOS FET

H7N0307AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G D S REJ03G1120-0300 (P
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2H7N0307ABSilicon N Channel MOS FET High Speed Power Switching

H7N0307AB Silicon N Channel MOS FET High Speed Power Switching ADE-208-1568A (Z) 2nd. Edition Aug. 2002 Features • Low on-resistance • RDS(on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Fra
Hitachi
Hitachi		data


H7N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1H7N0307ABSilicon N Channel MOS FET

H7N0307AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G D S REJ03G1120-0300 (P
Renesas
Renesas		data
2H7N0307ABSilicon N Channel MOS FET High Speed Power Switching

H7N0307AB Silicon N Channel MOS FET High Speed Power Switching ADE-208-1568A (Z) 2nd. Edition Aug. 2002 Features • Low on-resistance • RDS(on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Fra
Hitachi
Hitachi		data
3H7N0307LSilicon N Channel MOS FET High Speed Power Switching

H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1516D (Z) 5th. Edition May 2002 Features • Low on-resistance RDS(on) =4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 4 G 1 S 2 1 2
Hitachi
Hitachi		data
4H7N0307LDSilicon N Channel MOS FET

H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1121-0700 (Previous: ADE-208-1516E) Rev.7.00 Apr 07, 2006 Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RE
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5H7N0307LDSilicon N Channel MOS FET High Speed Power Switching

H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1516D (Z) 5th. Edition May 2002 Features • Low on-resistance RDS(on) =4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline LDPAK D G S 4 44 1 2 3 1 2
Hitachi
Hitachi		data
6H7N0307LMSilicon N Channel MOS FET

H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1121-0700 (Previous: ADE-208-1516E) Rev.7.00 Apr 07, 2006 Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RE
Renesas
Renesas		data
7H7N0307LMSilicon N Channel MOS FET High Speed Power Switching

H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1516D (Z) 5th. Edition May 2002 Features • Low on-resistance RDS(on) =4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline LDPAK D G S 4 44 1 2 3 1 2
Hitachi
Hitachi		data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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