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Datasheet K9XXG16UXM-E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K9XXG16UXM-E | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory K9W4G08U1M K9K2G08Q0M K9K2G08U0M
K9W4G16U1M K9K2G16Q0M K9K2G16U0M
FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA
Draft |  Samsung | data |
K9X Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K9XXG08UXA | 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory K9WAG08U1A K9K8G08U0A K9NBG08U5A
FLASH MEMORY
K9XXG08UXA
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR  Samsung semiconductor data | | |
| 2 | K9XXG08UXM-E | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory K9W4G08U1M K9K2G08Q0M K9K2G08U0M
K9W4G16U1M K9K2G16Q0M K9K2G16U0M
FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA
Draft Samsung data | | |
| 3 | K9XXG08UXM-K | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory K9W4G08U1M K9K2G08Q0M K9K2G08U0M
K9W4G16U1M K9K2G16Q0M K9K2G16U0M
FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA
Draft Samsung data | | |
| 4 | K9XXG08UXM-P | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory K9W4G08U1M K9K2G08Q0M K9K2G08U0M
K9W4G16U1M K9K2G16Q0M K9K2G16U0M
FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA
Draft Samsung data | | |
| 5 | K9XXG08UXM-Y | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory K9W4G08U1M K9K2G08Q0M K9K2G08U0M
K9W4G16U1M K9K2G16Q0M K9K2G16U0M
FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA
Draft Samsung data | | |
| 6 | K9XXG16UXM-E | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory K9W4G08U1M K9K2G08Q0M K9K2G08U0M
K9W4G16U1M K9K2G16Q0M K9K2G16U0M
FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA
Draft Samsung data | | |
| 7 | K9XXG16UXM-K | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory K9W4G08U1M K9K2G08Q0M K9K2G08U0M
K9W4G16U1M K9K2G16Q0M K9K2G16U0M
FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA
Draft Samsung data | |
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