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LCP02-150B1RL 데이터시트 PDF




ST Microelectronics에서 제조한 전자 부품 LCP02-150B1RL은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 LCP02-150B1RL 기능
기능 PROTECTION IC FOR RINGING SLICS
제조업체 ST Microelectronics
로고 ST Microelectronics 로고


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LCP02-150B1RL 데이터시트, 핀배열, 회로
®
A.S.D.™
LCP02-150B1
PROTECTION IC
FOR RINGING SLICS
FEATURES
s Protection IC recommended for ringing SLICs.
s Wide firing voltage range: from -110V to +95V.
s Low gate triggering current: IG = 5mA max.
s Peak pulse current: IPP = 30A (10/1000µs) .
s Holding current: IH = 150mA min.
s UL497B approved (file E136224)
MAIN APPLICATIONS
s Dual battery supply voltage SLICs
- negative battery supply configuration
- negative & positive battery supply configuration
s Central Office (CO)
s Private Branch Exchange (PBX)
s Digital Loop Carrier (DLC)
s Asymmetrical Digital Subscriber Line (ADSL G.Lite)
s Fiber in the Loop (FITL)
s Wireless Local Loop (WLL)
s Hybrid Fiber Coax (HFC)
s ISDN Terminal Adapter
s Cable modem
SO-8 WIDE
FUNCTIONAL DIAGRAM
TIP
Gn
GND
DESCRIPTION
The LCP02-150B1 has been developed to protect
SLICs operating on both negative and positive bat-
tery supplies, as well as on high voltage SLICs. It
provides crowbar mode protection for both TIP and
RING lines. The surge suppression is assumed for
each wire by two thyristor structures, one dedi-
cated to positive surges the second one for nega-
tive surges. Both positive and negative threshold
levels are programmable by two gates (Gn and
Gp). The use of transistors decreases the battery
currents during surge suppression.
The LCP02-150B1 has high Bellcore Core, ITU-T
and FCC Part 68 lightning surge ratings, ensuring
rugged performance in the field. In addition, it is
also specified to assist a designer to comply with
UL1950, IEC950 and CSA C22.2. It is UL 497B
approved (file E136224), and has UL94-V0 resin
approved
RING
PIN-OUT CONFIGURATION
TIP
Gn
GP
RING
TM: ASD is trademarks of STMicroelectronics.
September 2000 - Ed: 4A
Gp
NC
GND
GND
NC
1/8




LCP02-150B1RL pdf, 반도체, 판매, 대치품
LCP02-150B1
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
1 - PARAMETERS RELATED TO THE NEGATIVE SUPPRESSOR
Symbol
IGn
IH-
IRGL-
VDGL-
Parameter
Negative gate trigger
current
Holding current
(see fig.2)
Reverse leakage
current Gn/Line
Dynamic switching
voltage Gn / Line
(see note 2)
Test conditions
VGn/GND = -60V
Measured at 50Hz
Go-No Go test, VGn = -60V
Tj = 25°C, VGn/line = -190V
VGn/GND = -60V
10/1000µs 1kV RP = 25IPP = 30A
10/700µs 2kV RP = 25IPP = 30A
1.2/50µs 2kV RP = 25IPP = 30A
Min. Max. Unit
5 mA
150 mA
5 µA
18
8V
15
2 - PARAMETERS RELATED TO THE POSITIVE SUPPRESSOR
Symbol
IGp
IRGL+
VDGL+
Parameter
Positive gate trigger
current
Reverse leakage
current Gp/LINE
Dynamic switching
voltage Gp / Line
(see note 2)
Test conditions
VGp/GND = 60V
Measured at 50Hz
Tj = 25°C, VGp/line = +190V
VGp/GND = +60V
10/1000µs 1kV RP = 25IPP = 30A
10/700µs 2kV RP = 25IPP = 30A
1.2/50µs 2kV RP = 25IPP = 30A
Min. Max. Unit
5 mA
5 µA
18
8V
35
3 - PARAMETERS RELATED TO LINE/GND
Symbol
Parameter
Test conditions
Typ. Max.
IR Reverse
Tj = 25°C, VLINE = +90V, VGP/LINE = +1V
leakage current Tj = 25°C, VLINE = -105V, VGN/LINE = -1V
5
5
Coff Capacitance
LINE/GND
VR = -3V, F =1MHz, VGp = 60V, VGn = -60V 60
Note 2: The VDGL value is the difference between the peak line voltage during the surge and the programmed gate voltage.
Unit
µA
pF
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LCP02-150B1RL 전자부품, 판매, 대치품
LCP02-150B1
The LCP02-150B1 topology is particularly optimized for the new telecom applications such as fiber in the
loop, WLL systems, decentralized central office for example. The schematics of figures 6 and 7 give the 2
most frequent topologies used for these emergent applications
Fig. 6: Protection of SLIC with positive and negative battery voltages.
Line
Line card
-Vbat
Rs (*)
Gn TIP
GND 220nF LCP02 Gp
Rs (*)
RING
220nF
TIP
SLIC
RING
Rs (*) = PTC or Resistor fuse
Fig. 7: Protection of high voltage SLIC
Line card
Rs (*)
Line
Gn TIP
GND
220nF
LCP02 Gp
Rs (*)
RING
+Vb
-Vbat
TIP
SLIC
RING
Rs (*) = PTC or Resistor fuse
Figure 6 shows the classical protection topology for SLIC using both positive and negative battery volt-
ages. With such a protection the SLIC is protected against surge over +Vb and lower than -Vbat. In this
case, +Vb can be programmed up to +95V while -Vbat can be programmed down to -110V. Please note
that the differential voltage does not exceed Vbat max at 190V.
Figure 7 gives the protection topology for the new SLIC using high negative voltage down to -110V.
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관련 데이터시트

부품번호상세설명 및 기능제조사
LCP02-150B1RL

PROTECTION IC FOR RINGING SLICS

ST Microelectronics
ST Microelectronics

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