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PDF LPT16ED Data sheet ( Hoja de datos )
| Número de pieza | LPT16ED | |
| Descripción | 30 GHz SiGe Bipolar Transistor Final | |
| Fabricantes | SiGe Semiconductor Inc. | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LPT16ED (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Applications
Low phase noise oscillators up to 16 GHz
VCO’s, DRO’s and YIG oscillators
Point-to-point radios
Satellite communications
Fiber optics, OC-192 and OC-768
Local Multipoint Distribution Systems, LMDS
Features
Low 1/f noise: -142 dBc/Hz at 100 Hz offset
Phase noise: -167 dBc/Hz at 100 kHz offset
Output power up to +13 dBm
Operation down to 1 volt, 2 mA
Gold bump pads for wire bond or flip chip (for
direct die attachment)
Ordering Information
Type
LPT16ED
Package
Bare Die
Remark
Shipped in
Waffle Pack
Functional Block Diagram
LPT16ED
30 GHz SiGe Bipolar Transistor
Final
Product Description
The LPT16ED is a silicon germanium low phase
noise, high frequency NPN transistor for oscillator
applications up to 16GHz.
The transistor exhibits low 1/f noise and provides
+13 dBm typical output power at VCE of 3V and IC
equal to 20 mA. It is easily operated from a single
supply voltage with appropriate external passive
components.
The silicon germanium technology used in this device
provides outstanding high-frequency performance
combined with high thermal conductivity and superior
reliability under harsh operating and storage
conditions.
A complete mechanical description of the transistor is
available under SiGe Semiconductor Document
07MS001.
C
B
E
38-DST-01 Rev 2.3 Sept 5/02
1 of 5
1 page  
LPT16ED
30 GHz SiGe Bipolar Transistor
Final
http://www.sige.com
Headquarters: Canada
Phone: +1 613 820 9244
Fax: +1 613 820 4933
2680 Queensview Drive
Ottawa ON K2B 8J9 Canada
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Phone: +1 858 668 3541
Fax: +1 858 668 3546
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Phone: +1 852 9177 1917
United Kingdom
South Building, Walden Court
Parsonage Lane, Bishop’s Stortford
Hertfordshire CM23 5DB
Phone: +44 1279 464 200
Fax: +44 1279 464 201
Product Preview
The datasheet contains information from the product concept specification. SiGe Semiconductor Inc. reserves the right to change
information at any time without notification.
Preliminary Information
The datasheet contains information from the design target specification. SiGe Semiconductor Inc. reserves the right to change
information at any time without notification.
Final
The datasheet contains information from the final product specification. SiGe Semiconductor Inc. reserves the right to change
information at any time without notification. Production testing may not include testing of all parameters.
Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor Inc. assumes
no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or
other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any
patent or other intellectual property rights of SiGe Semiconductor Inc. or third parties. Specifications mentioned in this publication
are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe
Semiconductor Inc. products are NOT authorized for use in implantation or life support applications or systems without express
written approval from SiGe Semiconductor Inc.
RangerChargerTM, StreamChargerTM, PointChargerTM, and LightChargerTM are trademarks owned by SiGe Semiconductor Inc.
Copyright 2002 SiGe Semiconductor
All Rights Reserved
38-DST-01 Rev 2.3 Sept 5/02
5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet LPT16ED.PDF ] | |
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