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부품번호 | LPV1500 기능 |
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기능 | PACKAGED LOW NOISE PHEMT | ||
제조업체 | Filtronic Compound Semiconductors | ||
로고 | |||
Filtronic
Solid State
LPV1500
1 W Power PHEMT
FEATURES
• +31.5 dBm Typical Power at 18 GHz
• 8.5 dB Typical Power Gain at 18 GHz
• +27 dBm at 3.3V Battery Voltage
• +45 dBm Typical Intercept Point
• 50% Power-Added-Efficiency at 18 GHz
• Plated Source Thru-Vias
DRAIN
SOURCE
DRAIN
GATE
DIE SIZE: 16.5 x 16.1 mils (420 x 410 µm)
DIE THICKNESS: 3.0 mils (75 µm typ.)
BONDING PADS: 1.9 x 2.4 mils (50 x 60 µm typ.)
DESCRIPTION AND APPLICATIONS
The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High
Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure
and processing have been optimized for reliable high-power applications. The LP1V500 also features Si3N4 passivation
and is available in a flanged ceramic package (P100). The LPV1500 features plated source thru-vias for improved
performance.
Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The
LP1500 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is
patterned after MIL-STD-19500, JANC grade. Space-level screening to FSS JANS grade is also available.
PERFORMANCE SPECIFICATIONS (TA = 25°C)
SYMBOLS PARAMETERS
IDSS
P1dB
G1dB
IP3
Saturated Drain-Source Current
VDS = 2V VGS = 0V
Output Power at 1dB Gain Compression
VDS = 8.0V, IDS = 50% IDSS
f = 18 GHz
Power Gain at 1dB Gain Compression
VDS = 8.0V, IDS = 50% IDSS
f = 18 GHz
Output 3rd-Order Intercept Pt. VDS = 8V, IDS = 40% IDSS,
ηADD
IMAX
Power-Added Efficiency
Maximum Drain-Source Current
VDS = 2V VGS = +1V
GM Transconductance
VDS = 2V VGS = 0V
VP Pinch-Off Voltage
IGSO Gate-Source Leakage Current
VDS = 2V IDS = 5mA
VGS = -5V
BVGS
BVGD
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
IGS = 8mA
IGD = 8mA
ΘJ Thermal Resistivity
MIN TYP MAX UNITS
375 490 600 mA
30.0 31.5
dBm
6.5 8.5
45
dB
dBm
50 %
925 mA
350 450
mS
-0.25 -1.2 -2.0
V
10 75 µA
-12 -15
V
-12 -16
V
45 °C/W
Phone: (408) 988-1845
DSS-041 WA
Internet: http://www.filtronicsolidstate.com
Fax: (408) 970-9950
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구 성 | 총 2 페이지수 | ||
다운로드 | [ LPV1500.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
LPV1500 | PACKAGED LOW NOISE PHEMT | Filtronic Compound Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |