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PDF LPV3000 Data sheet ( Hoja de datos )
| Número de pieza | LPV3000 | |
| Descripción | 2W Power PHEMT | |
| Fabricantes | Filtronic Compound Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LPV3000 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Filtronic
Solid State
DRAIN PAD
(x4)
LP3000/LPV3000
2W Power PHEMT
FEATURES
• +33.5 dBm Typical Power at 18 GHz
• 7 dB Typical Power Gain at 18 GHz
• +30.5 dBm at 3.3V Battery Voltage
• Low Intermodulation Distortion
• 45% Power-Added-Efficiency at 18 GHz
SOURCE BOND
PAD (x2)
GATE PAD
(x4)
DIE SIZE: 28.3 x 16.5 mils (720 x 420 µm)
DIE THICKNESS: 2.6 mils (65 µm typ.)
BONDING PADS: 1.9 x 2.4 mils (50 x 60 µm typ.)
DESCRIPTION AND APPLICATIONS
The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron
Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate. The
recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and
processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is
available with plated source via-holes (LPV 3000) as an option for improved high-frequency performance. Also available in
a ceramic flanged package (P100) and ball grid array package.
Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The
LPV 3000/LP 3000 may be procured in a variety of grades, depending upon specific user requirements. Standard lot
screening is patterned after MIL-STD-19500, JANC grade. Space-level screening to FSS JANS grade is also available.
PERFORMANCE SPECIFICATIONS (TA = 25°C)
SYMBOLS PARAMETERS
IDSS
P1dB
G1dB
ηADD
IMAX
GM
Saturated Drain-Source Current
VDS = 2V VGS = 0V
Output Power at 1dB Gain Compression
VDS = 8.0V, IDS = 50% IDSS (LP. LPV)
f = 18 GHz
Power Gain at 1dB Gain Compression
VDS = 8.0V, IDS = 50% IDSS (LP)
VDS = 8.0V, IDS = 50% IDSS (LPV)
f = 18 GHz
f = 18 GHz
Power-Added Efficiency (typ. for Class A operation)
Maximum Drain-Source Current
Transconductance
VDS = 2V VGS = +1V
VDS = 2V VGS = 0V
VP Pinch-Off Voltage
IGSO Gate-Source Leakage Current
VDS = 2V IDS = 10mA
VGS = -5V
BVGS
Gate-Source Breakdown Voltage
IGS = 15mA
BVGD
Gate-Drain Breakdown Voltage
IGD = 15mA
ΘJ Thermal Resistivity
MIN TYP MAX UNITS
800 1060 1100 mA
33.0 33.5
dBm
4.0 6.0
6.0 7.0
45
dB
dB
%
1700
mA
725 900
mS
-0.25 -1.2 -2.0
V
15 125 µA
-12 -15
V
-12 -16
V
20 °C/W
Get Curtice Model
Phone: (408) 988-1845
DSS-027 WG
Internet: http://www.filtronicsolidstate.com
Fax: (408) 970-9950
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet LPV3000.PDF ] | |
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