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부품번호 | MBT3904DW1T1G 기능 |
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기능 | Dual General Purpose Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 8 페이지수
MBT3904DW1T1,
MBT3904DW2T1
Dual General Purpose
Transistors
The MBT3904DW1T1 and MBT3904DW2T1 devices are a
spin−off of our popular SOT−23/SOT−323 three−leaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT−363 six−leaded surface mount package. By putting two
discrete devices in one package, this device is ideal for low−power
surface mount applications where board space is at a premium.
Features
• hFE, 100−300
• Low VCE(sat), ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Electrostatic Discharge
Symbol
Value
Unit
VCEO 40 Vdc
VCBO 60 Vdc
VEBO
IC
ESD
6.0 Vdc
200 mAdc
HBM>16000,
MM>2000
V
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERAML CHARACTERISTICS
Characteristic
Total Package Dissipation (Note 1)
TA = 25°C
Thermal Resistance,
Junction−to−Ambient
Symbol
PD
RqJA
Max
150
833
Unit
mW
°C/W
Junction and Storage
Temperature Range
TJ, Tstg − 55 to +150 °C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
© Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. 4
1
http://onsemi.com
MARKING
DIAGRAM
6
SOT−363/SC−88/
6
SC70−6
XXd
CASE 419B
11
XX = MA for MBT3904DW1T1
MJ for MBT3904DW2T1
d = Date Code
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
MBT3904DW1T1
STYLE 1
(3) (2) (1)
Q2
Q1
(4) (5)
MBT3904DW2T1
STYLE 27
(6)
ORDERING INFORMATION
Device
Package
Shipping†
MBT3904DW1T1 SOT−363 3000 Units/Reel
MBT3904DW1T1G SOT−363 3000 Units/Reel
(Pb−Free)
MBT3904DW2T1 SOT−363 3000 Units/Reel
MBT3904DW2T1G SOT−363 3000 Units/Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBT3904DW1T1/D
MBT3904DW1T1, MBT3904DW2T1
TYPICAL TRANSIENT CHARACTERISTICS
10
7.0
5.0
Cibo
3.0
2.0 Cobo
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
20 30 40
TJ = 25°C
TJ = 125°C
5000
3000 VCC = 40 V
2000 IC/IB = 10
1000
700
500
300
200
100
70
50
1.0
QT
QA
2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
200
500 500
300
200
IC/IB = 10
300
200
VCC = 40 V
IC/IB = 10
100
70
50
30
20
10
7
5
1.0
tr @ VCC = 3.0 V
40 V
15 V
td @ VOB = 0 V
2.0 V
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
200
100
70
50
30
20
10
7
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 6. Rise Time
200
500
300
200 IC/IB = 20
IC/IB = 10
t′s = ts − 1/8 tf
IB1 = IB2
100
70
50 IC/IB = 20
30 IC/IB = 10
20
10
7
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
200
500
300
200
100
70
50
30
20
10
7
5
1.0
IC/IB = 20
VCC = 40 V
IB1 = IB2
IC/IB = 10
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
200
http://onsemi.com
4
4페이지 MBT3904DW1T1, MBT3904DW2T1
PACKAGE DIMENSIONS
SOT−363/SC−88/SC70−6
CASE 419B−02
ISSUE U
A
G
654
S −B−
123
D 6 PL
0.2 (0.008) M B M
N
C
H
K
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
INCHES
DIM MIN MAX
A 0.071 0.087
B 0.045 0.053
C 0.031 0.043
D 0.004 0.012
G 0.026 BSC
H −−− 0.004
J 0.004 0.010
K 0.004 0.012
N 0.008 REF
S 0.079 0.087
MILLIMETERS
MIN MAX
1.80 2.20
1.15 1.35
0.80 1.10
0.10 0.30
0.65 BSC
−−− 0.10
0.10 0.25
0.10 0.30
0.20 REF
2.00 2.20
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 27:
PIN 1. BASE 2
2. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.40
0.0157
0.65
0.025
1.9
0.0748
ǒ ǓSCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
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부품번호 | 상세설명 및 기능 | 제조사 |
MBT3904DW1T1 | Dual General Purpose Transistors | Leshan Radio Company |
MBT3904DW1T1 | Dual General Purpose Transistors | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |