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PDF MBT3904DW2T1G Data sheet ( Hoja de datos )

Número de pieza MBT3904DW2T1G
Descripción Dual General Purpose Transistors
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MBT3904DW1T1,
MBT3904DW2T1
Dual General Purpose
Transistors
The MBT3904DW1T1 and MBT3904DW2T1 devices are a
spin−off of our popular SOT−23/SOT−323 three−leaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT−363 six−leaded surface mount package. By putting two
discrete devices in one package, this device is ideal for low−power
surface mount applications where board space is at a premium.
Features
• hFE, 100−300
• Low VCE(sat), ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Electrostatic Discharge
Symbol
Value
Unit
VCEO 40 Vdc
VCBO 60 Vdc
VEBO
IC
ESD
6.0 Vdc
200 mAdc
HBM>16000,
MM>2000
V
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERAML CHARACTERISTICS
Characteristic
Total Package Dissipation (Note 1)
TA = 25°C
Thermal Resistance,
Junction−to−Ambient
Symbol
PD
RqJA
Max
150
833
Unit
mW
°C/W
Junction and Storage
Temperature Range
TJ, Tstg − 55 to +150 °C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
© Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. 4
1
http://onsemi.com
MARKING
DIAGRAM
6
SOT−363/SC−88/
6
SC70−6
XXd
CASE 419B
11
XX = MA for MBT3904DW1T1
MJ for MBT3904DW2T1
d = Date Code
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
MBT3904DW1T1
STYLE 1
(3) (2) (1)
Q2
Q1
(4) (5)
MBT3904DW2T1
STYLE 27
(6)
ORDERING INFORMATION
Device
Package
Shipping†
MBT3904DW1T1 SOT−363 3000 Units/Reel
MBT3904DW1T1G SOT−363 3000 Units/Reel
(Pb−Free)
MBT3904DW2T1 SOT−363 3000 Units/Reel
MBT3904DW2T1G SOT−363 3000 Units/Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBT3904DW1T1/D

1 page




MBT3904DW2T1G pdf
MBT3904DW1T1, MBT3904DW2T1
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
SOURCE RESISTANCE = 200 W
10 IC = 1.0 mA
8 SOURCE RESISTANCE = 200 W
IC = 0.5 mA
6 SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
14
12 f = 1.0 kHz IC = 1.0 mA
10 IC = 0.5 mA
8
6
4
IC = 50 mA
IC = 100 mA
2 SOURCE RESISTANCE = 500 W
IC = 100 mA
0
0.1 0.2 0.4
1.0 2.0 4.0
10 20 40
f, FREQUENCY (kHz)
100
2
0
0.1 0.2
0.4 1.0 2.0 4.0 10 20
RS, SOURCE RESISTANCE (k OHMS)
40
100
Figure 9. Noise Figure
Figure 10. Noise Figure
300
200
100
70
50
30
0.1
20
10
5.0
2.0
1.0
0.5
0.2
0.1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
50
20
10
5
0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
5.0
10
2
1
0.1
10
7.0
5.0
3.0
2.0
0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
Figure 12. Output Admittance
0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
Figure 13. Input Impedance
10
1.0
0.7
0.5
0.1
0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
Figure 14. Voltage Feedback Ratio
10
10
http://onsemi.com
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