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PDF MBT3906DW1T1 Data sheet ( Hoja de datos )
| Número de pieza | MBT3906DW1T1 | |
| Descripción | Dual General Purpose Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MBT3906DW1T1
Dual General Purpose
Transistor
The MBT3906DW1T1 device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low–power surface mount
applications where board space is at a premium.
• hFE, 100–300
• Low VCE(sat), ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
• Device Marking: MBT3906DW1T1 = A2
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
Electrostatic Discharge
Symbol
VCEO
VCBO
VEBO
IC
ESD
Value
–40
–40
–5.0
–200
HBM>16000,
MM>2000
Unit
Vdc
Vdc
Vdc
mAdc
V
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation(1)
TA = 25°C
Thermal Resistance Junction to
Ambient
Symbol
PD
RqJA
Max
150
833
Unit
mW
°C/W
Junction and Storage
Temperature Range
TJ, Tstg –55 to +150
°C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1. recommended footprint.
http://onsemi.com
6 54
1
23
SOT–363/SC–88
CASE 419B
STYLE 1
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
MBT3906DW1T1
ORDERING INFORMATION
Device
Package
Shipping
MBT3906DW1T1 SOT–363 3000 Units/Reel
© Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 0
1
Publication Order Number:
MBT3906DW1T1/D
1 page  
MBT3906DW1T1
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
1.0 +25°C
0.7
-ā55°C
0.5
VCE = 1.0 V
0.3
0.2
0.1
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
20 30
50 70 100
200
1.0
0.8
IC = 1.0 mA
0.6
10 mA
30 mA
0.4
0.2
0
0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
Figure 14. Collector Saturation Region
TJ = 25°C
100 mA
2.0 3.0
5.0 7.0 10
1.0
TJ = 25°C
0.8
0.6
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0 2.0 5.0 10
20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 15. “ON” Voltages
1.0
0.5 qVC FOR VCE(sat)
0
-ā0.5
-ā1.0
-ā1.5 qVB FOR VBE(sat)
+25°C TO +125°C
-ā55°C TO +25°C
+25°C TO +125°C
-ā55°C TO +25°C
-ā2.0
0
20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA)
Figure 16. Temperature Coefficients
http://onsemi.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MBT3906DW1T1.PDF ] | |
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