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MC-4R128FKE8S 데이터시트 PDF




Elpida Memory에서 제조한 전자 부품 MC-4R128FKE8S은 전자 산업 및 응용 분야에서
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부품번호 MC-4R128FKE8S 기능
기능 Direct Rambus DRAM SO-RIMM Module 128M-BYTE (64M-WORD x 18-BIT)
제조업체 Elpida Memory
로고 Elpida Memory 로고


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MC-4R128FKE8S 데이터시트, 핀배열, 회로
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4R128FKE8S
Direct Rambus DRAM SO-RIMMTM Module
128M-BYTE (64M-WORD x 18-BIT)
Description
The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable
for use in a broad range of applications including computer memory, mobile personal computers, networking
systems, and other applications where high bandwidth and low latency are required.
MC-4R128FKE8S modules consists of four 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588).
These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling
Level (RSL) technology permits 800MHz transfer rates while using conventional system and board design
technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per 16 bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield high bus efficiency. The Direct RDRAM's multi-bank architecture supports up to four simultaneous
transactions per device.
Features
160 edge connector pads with 0.65mm pad spacing
128 MB Direct RDRAM storage
Each RDRAMhas 32 banks, for 128 banks total on module
Gold plated contacts
RDRAMs use Chip Scale Package (CSP)
Serial Presence Detect support
Operates from a 2.5 V supply
Powerdown self refresh modes
Separate Row and Column buses for higher efficiency
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0139N30 (Ver. 3.0)
Date Published June 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory,Inc. 2001-2002
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.




MC-4R128FKE8S pdf, 반도체, 판매, 대치품
Module Pad Names
Pad Signal Name Pad Signal Name
A1 GND B1 GND
A2 LDQA8 B2 LDQA7
A3 GND B3 GND
A4 LDQA6 B4 LDQA5
A5 GND B5 GND
A6 LDQA4 B6 LDQA3
A7 GND B7 GND
A8 LDQA2 B8 LDQA1
A9 GND B9 GND
A10 LDQA0 B10 LCFM
A11 GND B11 GND
A12 LCTM B12 LCFMN
A13 GND B13 GND
A14 LCTMN B14 LROW2
A15 GND B15 GND
A16 LROW1 B16 LROW0
A17 GND B17 GND
A18 LCOL4 B18 LCOL3
A19 GND B19 GND
A20 LCOL2 B20 LCOL1
A21 GND B21 GND
A22 LCOL0 B22 LDQB1
A23 GND B23 GND
A24 LDQB0 B24 LDQB3
A25 GND B25 GND
A26 LDQB2 B26 LDQB5
A27 GND B27 GND
A28 LDQB4 B28 LDQB7
A29 GND B29 GND
A30 LDQB6 B30 LDQB8
A31 GND B31 GND
A32 LSCK B32 LCMD
A33 GND B33 GND
A34 SOUT B34
SIN
A35 VDD B35 VDD
A36 NC B36 NC
A37 GND B37 GND
A38 NC B38 NC
A39
VCMOS
B39
VCMOS
A40 NC B40 NC
MC-4R128FKE8S
Pad Signal Name Pad Signal Name
A41 NC B41 NC
A42
VREF
B42
VREF
A43 SCL B43 SA0
A44 VDD B44 VDD
A45 SDA B45 SA1
A46 VDD B46 VDD
A47 SVDD B47 SWP
A48 GND B48 GND
A49 RSCK B49 RCMD
A50 GND B50 GND
A51 RDQB8 B51 RDQB6
A52 GND B52 GND
A53 RDQB7 B53 RDQB4
A54 GND B54 GND
A55 RDQB5 B55 RDQB2
A56 GND B56 GND
A57 RDQB3 B57 RDQB0
A58 GND B58 GND
A59 RDQB1 B59 RCOL0
A60 GND B60 GND
A61 RCOL1 B61 RCOL2
A62 GND B62 GND
A63 RCOL3 B63 RCOL4
A64 GND B64 GND
A65 RROW0 B65 RROW1
A66 GND B66 GND
A67 RROW2 B67 RCTMN
A68 GND B68 GND
A69 RCFMN B69
RCTM
A70 GND B70 GND
A71 RCFM B71 RDQA0
A72 GND B72 GND
A73 RDQA1 B73 RDQA2
A74 GND B74 GND
A75 RDQA3 B75 RDQA4
A76 GND B76 GND
A77 RDQA5 B77 RDQA6
A78 GND B78 GND
A79 RDQA7 B79 RDQA8
A80 GND B80 GND
4 Data Sheet E0139N30 (Ver. 3.0)

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MC-4R128FKE8S 전자부품, 판매, 대치품
Block Diagram
MC-4R128FKE8S
SIO 0
SIO 1
SCK
CMD
VREF
SIO 0
SIO 1
SCK
CMD
VREF
SIO 0
SIO 1
SCK
CMD
VREF
SIO 0
SIO 1
SCK
CMD
VREF
U1
U2
U3
U4
SVDD
SCL
SWP
47 k
SCL
WP
VCC
U0 SDA
A0 A1 A2
SA0 SA1 SA2
SERIAL PD
SDA
Remarks 1. Rambus Channel signals form a loop through the SO-RIMM module, with the exception of the SIO
chain.
2. See Serial Presence Detection Specification for information on the SPD device and its contents.
Data Sheet E0139N30 (Ver. 3.0)
7

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