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부품번호 PESD5V0L4UW 기능
기능 Low capacitance quadruple ESD protection array
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PESD5V0L4UW 데이터시트, 핀배열, 회로
PESDxL4UF; PESDxL4UG;
PESDxL4UW
Low capacitance unidirectional quadruple ESD protection
diode arrays
Rev. 04 — 28 February 2008
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode
arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to
four signal lines from the damage caused by ESD and other transients.
Table 1. Product overview
Type number
Package
NXP
PESD3V3L4UF
SOT886
PESD5V0L4UF
SOT886
PESD3V3L4UG
SOT353
PESD5V0L4UG
SOT353
PESD3V3L4UW
SOT665
PESD5V0L4UW
SOT665
JEITA
-
-
SC-88A
SC-88A
-
-
JEDEC
MO-252
MO-252
-
-
-
-
Package configuration
leadless ultra small
leadless ultra small
very small
very small
ultra small and flat lead
ultra small and flat lead
1.2 Features
I ESD protection of up to four lines
I Low diode capacitance
I Max. peak pulse power: PPP = 30 W
I Low clamping voltage: VCL = 12 V
I Ultra low leakage current: IRM = 5 nA
I ESD protection up to 20 kV
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5 (surge); IPP = 2.5 A
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Communication systems
I Portable electronics
I Subscriber Identity Module (SIM) card
protection




PESD5V0L4UW pdf, 반도체, 판매, 대치품
NXP Semiconductors
PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
IZSM non-repetitive peak reverse square wave;
current
tp = 1 ms
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
-
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
-
PZSM
Per device
non-repetitive peak reverse square wave;
power dissipation
tp = 1 ms
-
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
65
65
Max Unit
0.9 A
0.8 A
6W
150
+150
+150
°C
°C
°C
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[3] For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.
Table 7. ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
VESD
electrostatic discharge voltage
Conditions
Min
IEC 61000-4-2
(contact discharge)
[1][2][3] -
MIL-STD-883 (human
body model)
-
[1] Device stressed with ten non-repetitive ESD pulses.
[2] For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[3] For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.
Max Unit
20 kV
10 kV
Table 8. ESD standards compliance
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
PESDXL4UF_G_W_4
Product data sheet
Rev. 04 — 28 February 2008
© NXP B.V. 2008. All rights reserved.
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PESD5V0L4UW 전자부품, 판매, 대치품
NXP Semiconductors
PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays
10
IZSM
(A)
1
006aab134
(1)
(2)
102
PZSM
(W)
10
006aab135
(1)
(2)
101
102
101
1 10
tp (ms)
Tamb = 25 °C
(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW
(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW
Fig 3. Non-repetitive peak reverse current as a
function of pulse duration; maximum values
26
Cd
(pF)
22
006aab136
18
(1)
14
(2)
10
6
012345
VR (V)
f = 1 MHz; Tamb = 25 °C
(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW
(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
1
102
101
1 10
tp (ms)
Tamb = 25 °C
(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW
(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW
Fig 4. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
006aab137
10
IR
IR(25°C)
1
101
75
25
25
75 125 175
Tj (°C)
Fig 6. Relative variation of reverse current as a
function of junction temperature; typical values
PESDXL4UF_G_W_4
Product data sheet
Rev. 04 — 28 February 2008
© NXP B.V. 2008. All rights reserved.
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